Method of manufacturing semiconductor integrated circuit device optical mask therefor, its manufacturing method, and mask blanks

A method of manufacturing a semiconductor integrated circuit device, comprising:

• (a) the step of irradiating far ultraviolet or vacuum ultraviolet exposure light from a first major surface or a second major surface side of said mask substrate in the state in which the peripheral region of said mask substrate is held on a mask holding mechanism, said mask substrate having on the first major surface thereof a light shielding pattern which is an integrated circuit pattern on a mask and comprises a resist pattern including an organic film, said resist pattern being not provided on said peripheral region;
• and
• (b) the step of reduction-projecting, by a projection optical system, said exposure light which has transmitted through said mask substrate, whereby said integrated circuit pattern is imaged on a photo resist film formed on a first major surface of a semiconductor integrated circuit wafer and thus transferred.

A method of manufacturing a semiconductor integrated circuit device, comprising:

• (a) the step of irradiating far ultraviolet or vacuum ultraviolet exposure light from a first major surface or second major surface side of a mask substrate, said mask substrate having, in an integrated circuit pattern region of the first major surface thereof, a light shielding pattern which is an integrated circuit pattern on a mask and comprises a phete-resist pattern including an organic film and having a light screening metal region provided in the peripheral region of said first major surface;
• and
• (b) the step of reduction-projecting, by a projection optical system, said exposure light which has transmitted through said mask substrate, whereby, on a photo resist film formed on a first major surface of a semiconductor integrated circuit wafer, said integrated circuit pattern is imaged and thus transferred.

A method of manufacturing a semiconductor integrated circuit device, comprising:

• (a) the step of irradiating far ultraviolet or vacuum ultraviolet exposure light from a first major surface or a second major surface side of a mask substrate, said mask substrate having, in an integrated circuit pattern region of the first major surface thereof, a light shielding pattern which is an integrated circuit pattern on a mask and comprises a resist pattern including an organic film, wherein a pellicle is contact-fixed in that part of the peripheral portion of said integrated circuit pattern region in which said resist pattern is not formed;
• and
• (b) the step of reduction-projecting, by a projection optical system, said exposure light which has transmitted through said mask substrate, whereby, on a photo resist film formed on a first major surface of a semiconductor integrated circuit wafer, said integrated circuit pattern is imaged and thus transferred.

A method of manufacturing a semiconductor integrated circuit device, comprising:

• (a) the step of irradiating far ultraviolet or vacuum ultraviolet exposure light from a first major surface side or a second major surface side of a mask substrate, said mask substrate having, on the first major surface thereof, a halftone light shielding pattern comprising a resist pattern including an organic film which constitutes an integrated circuit pattern on a mask;
• and
• (b) the step of reduction-projecting, by a projection optical system, said exposure light which has transmitted through said mask substrate, whereby, on a photo resist film formed on a first major surface of a semiconductor integrated circuit wafer, said integrated circuit pattern is imaged and thus transferred.

A method of manufacturing a semiconductor integrated circuit device, comprising:

• (a) the step of irradiating far ultraviolet or vacuum ultraviolet exposure light from a first major surface side or a second major surface side of a mask substrate, which has, on the first major surface thereof, a light shielding pattern which is an integrated circuit pattern on a Lebenson type phase shift mask and comprises a resist pattern including an organic film;
• and
• (b) the step of reduction-projecting, by a projection optical system, the exposure light which has transmitted through said mask substrate, whereby, on a first major surface of a semiconductor integrated circuit wafer, said integrated circuit pattern is imaged and thus transferred.

A method of manufacturing a semiconductor integrated circuit device, comprising:

• (a) the step of irradiating far ultraviolet or vacuum ultraviolet exposure light from a first major surface or a second major surface side of a mask substrate, said mask substrate having, in an integrated circuit pattern region of said first major surface thereof, a light shielding pattern which is an integrated circuit pattern on a mask and comprises a resist pattern including an organic film, wherein a pellicle is contact-fixed in the peripheral portion of said integrated circuit pattern of said first major surface so as to cover said integrated circuit pattern;
• and
• (b) the step of reduction-projecting, by a projection optical system, said exposure light which has transmitted through said mask substrate, whereby, on a photo resist film formed on a first major surface of a semiconductor integrated circuit, said integrated circuit pattern is imaged and thus transferred.

A method of manufacturing a semiconductor integrated circuit device, comprising:

• (a) the step of irradiating far ultraviolet or vacuum ultraviolet exposure light from a first major surface or a second major surface side of a mask substrate, said mask substrate having, in an integrated circuit pattern region of said first major surface thereof, a light shielding pattern which is an integrated circuit pattern on a mask and comprises a resist pattern including an organic film, wherein a protective film is formed on said resist pattern so as to cover said integrated circuit pattern region of said first major surface;
• and
• (b) the step of reduction-projecting, by a projection optical system, said exposure light which has transmitted through said mask substrate, whereby, on a photo resist film formed on a first major surface of a semiconductor integrated circuit wafer, said integrated circuit pattern is imaged and thus transferred.