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US 7,125,645 B2Granted
Composite photoresist for pattern transferring
AssigneeUnited Microelectronics Corp.
InventorJui-Tsen Huang
Life of this patent
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Abstract
A composite photoresist structure includes an first organic layer located on a substrate, a sacrificial layer located on the first organic layer, and a second organic layer located on the sacrificial layer. The first organic layer is made of materials that can be easily removed by plasma. Therefore, the surface of the substrate will not be damaged while transferring a predetermined pattern onto the substrate.
Claims21
A composite photoresist structure for transferring a pattern onto a surface to be etched, comprising:
- a first organic layer disposed over the surface to be etched, and totally removed after a pattern transferring process;
- a sacrificial layer disposed on the first organic layer;
- and
- a second organic layer disposed on the sacrificial layer, wherein the second organic layer is made of organic photoresist material which is selected from the group consisting of positive organic material, negative organic material, and a material suitable for utilizing in e-beam lithography process.
1 more element
A photoresist structure for transferring a sub-micron pattern onto a surface to be etched, comprising:
- a first organic layer disposed over a the surface to be etched, and totally removed after a pattern transferring process of the sub-micron pattern;
- a sacrificial layer disposed on the organic layer;
- an anti-reflection layer disposed on the sacrificial layer;
- and
- a second organic layer disposed on the anti-reflection layer, wherein the second organic layer is made of organic pbotoresist material which is selected from the group consisting of positive organic material, negative organic material, and a material suitable for utilizing in e-beam lithography process.
2 more elements
Dependencies are inferred from the claim text.