Single-crystal silicon ingot and wafer having homogeneous vacancy defects, and method and apparatus for making same
AssigneeSiltron Inc.
InventorsYoung Ho Hong, Ill Soo Choi, Sang Hee Kim, Man Seok Kwak, Hong Woo Lee
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Abstract
The present invention improves upon the Czochralski method for growing a single-crystal silicon ingot and provides a high quality silicon wafer having an oxide layer with superior voltage-resistance characteristics. An apparatus and method are also provided, whereby vacancy defect density and distribution are uniformly controlled. A single-crystal silicon ingot is grown under a condition where the temperature variation of the ingot is less than or equal to 20° C./cm in the temperature range of 1000 to 1100° C.
Claims13
A silicon wafer prepared from a single-crystal silicon ingot grown by the Czochralski method, comprising:
- a silicon wafer having an oxide layer and a region in which each vacancy defect is no smaller than a predetermined size, below which size the oxide layer has a voltage-resistance characteristic of less than 10 MV/cm, the region extending radially outward from the center of the wafer for at least 90% of a wafer radius.
In a single-crystal silicon ingot grown by the Czochralski method, from which a silicon wafer having an oxide layer can be formed, the improvement comprising a region of the ingot in which each vacancy defect is no smaller than a predetermined size, below which size the oxide layer of a wafer formed from the ingot has a voltage-resistance characteristic of less than 10 MV/cm, the region extending radially outward from the ingot's axis for at least 80% of a wafer radius and lengthwise for at least 40% of the ingot's length.
Dependencies are inferred from the claim text.