Formation of a silicon germanium-on-insulator structure by oxidation of a buried porous silicon layer
AssigneeInternational Business Machines Corporation
InventorsStephen W. Bedell, Kwang Su Choe, Keith E. Fogel, Devendra K. Sadana
Life of this patent
Estimating the term…
Abstract
A simple and direct method of forming a SiGe-on-insulator that relies on the oxidation of a porous silicon layer (or region) that is created beneath a Ge-containing layer is provided. The method includes the steps of providing a structure comprising a Si-containing substrate having a hole-rich region formed therein and a Ge-containing layer atop the Si-containing substrate; converting the hole-rich region into a porous region; and annealing the structure including the porous region to provide a substantially relaxed SiGe-on-insulator material.
Claims36
A method of fabricating a SiGe-on-insulator substrate material comprising:
- providing a structure comprising a Si-containing substrate having a hole-rich region formed therein and a Ge-containing layer atop the Si-containing substrate, said providing includes one of (i) growing a p-rich epitaxial layer on an initial Si-containing substrate, forming a single crystal Si-containing layer atop the p-rich epitaxial layer, and forming the Ge-containing layer on the single crystal Si-containing layer, (ii) ion implanting a p-type dopant into an initial single crystal Si-containing substrate and then forming the Ge-containing layer on the substrate, or (iii) forming the Ge-containing layer on an initial single crystal Si-containing substrate and then implanting p-type dopant into the substrate to form said hole-rich region;
- converting the hole-rich region into a porous region;
- and
- annealing the structure including the porous region to provide a substantially relaxed SiGe-on-insulator material.
A method of fabricating a SiGe-on-insulator substrate material comprising:
- providing a structure comprising a Si-containing substrate having a region of a high concentration of p-type dopant formed therein and a Ge-containing layer atop the Si-containing substrate, said providing includes one of (i) growing a p-rich epitaxial layer on an initial Si-containing substrate, forming a single crystal Si-containing layer atop the p-rich epitaxial layer, and forming the Ge-containing layer on the single crystal Si-containing layer, (ii) ion implanting the p-type dopant into an initial single crystal Si-containing substrate and then forming the Ge-containing layer on the substrate, or (iii) forming the Ge-containing layer on an initial single crystal Si-containing substrate and then implanting the p-type dopant into the substrate;
- converting the region of p-type dopant into a porous region using an anodization process, wherein an HF-containing solution is employed;
- and
- oxidizing the structure including the porous region to provide a substantially relaxed SiGe-on-insulator material.
Dependencies are inferred from the claim text.