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US 7,125,318 B2Granted
Polishing pad having a groove arrangement for reducing slurry consumption
AssigneeRohm and Haas Electronic Materials CMP Holdings, Inc.
InventorGregory P. Muldowney
Life of this patent
Estimating the term…
Abstract
A polishing pad (200) that includes a polishing layer (204) having a polishing region (208) for polishing a wafer (220). The polishing layer includes a set of inflow grooves (232) that extend into the polishing region and a set of outflow grooves (236) that extend out of the polishing region. The inflow and outflow grooves cooperate with one another to enhance the utilization of a polishing slurry during polishing of the wafer.
Claims10
A polishing pad useful for polishing a surface of a semiconductor substrate, the polishing pad comprising:
- (a) a rotational axis;
- (b) a polishing layer that includes:
- (i) a central region;
- (ii) an outer peripheral edge spaced from the central region;
- and
- (iii) a generally annular polishing region configured to polish the surface of a workpiece and having an inner periphery adjacent the central region and an outer periphery spaced from the inner periphery;
- (c) a first plurality of grooves in the polishing layer, each groove of the first plurality of grooves having a first end located within the central region and a second end located within the polishing region, the second end being radially inward of the outer peripheral edge and radially outward of the rotational axis;
- and
- (d) a second plurality of grooves in the polishing layer, each groove of the second plurality of grooves spaced from ones of the first plurality of grooves and having a first end located within the polishing region and a second end located radially outward of the second end of the first plurality of grooves in at least one of:
- (i) the outer peripheral edge;
- and
- (ii) radially outward from the outer periphery of the polishing region.
9 more elements
A method of chemical mechanical polishing a semiconductor substrate, comprising the steps of:
- (a) providing a polishing pad comprising:
- (i) a rotational axis;
- (ii) a polishing layer that includes:
- (A) a central region;
- (B) an outer peripheral edge spaced from the central region;
- and
- (C) a generally annular polishing region configured to polish the surface of the semiconductor substrate and having an inner periphery adjacent the central region and an outer periphery spaced from the inner periphery;
- (iii) a first plurality of grooves in the polishing layer, each groove of the first plurality of grooves having a first end located within the central region and a second end located within the polishing region, the second end being radially inward of the outer peripheral edge and radially outward of the rotational axis;
- and
- (iv) a second plurality of grooves in the polishing layer, each groove of the second plurality of grooves spaced from ones of the first plurality of grooves and having a first end located within the polishing region and a second end located radially outward of the second end of the first plurality of grooves in at least one of the outer peripheral edge and located radially outward from the outer periphery of the polishing region;
- and
- (b) providing a polishing solution to the central region of the polishing pad.
9 more elements
A polishing system for use with a polishing solution to polish a surface of a semiconductor substrate, comprising:
- (a) a polishing pad comprising:
- (i) a rotational axis;
- (ii) a polishing layer that includes:
- (A) a central region;
- (B) an outer peripheral edge spaced from the central region;
- and
- (C) a generally annular polishing region configured to polish the surface of the semiconductor substrate and having an inner periphery adjacent the central region and an outer periphery spaced from the inner periphery;
- (iii) a first plurality of grooves in the polishing layer, each groove of the first plurality of grooves having a first end located within the central region and a second end located within the polishing region, to second end being radially inward of the outer peripheral edge and radially outward of the rotational axis;
- and
- (iv) a second plurality of grooves in the polishing layer, each groove of the second plurality of grooves spaced from ones of the first plurality of grooves and having a first end located within the polishing region and a second end located radially outward of the second end of the first plurality of grooves in at least one of the outer peripheral edge and located radially outward from the outer periphery of the polishing region;
- and
- (b) a polishing solution delivery system for delivering the polishing solution to the central region of the polishing pad.
9 more elements
Dependencies are inferred from the claim text.