Multi-junction photovoltaic cell having buffer layers for the growth of single crystal boron compounds

A photovoltaic cell, comprising:

• a substrate;
• a nucleation layer disposed above the substrate;
• a first buffer layer disposed above the nucleation layer, the first buffer layer comprising a primary thickness, and the first buffer layer being an atomically smooth layer;
• a second buffer layer disposed above the first buffer layer, the second buffer layer comprising a secondary thickness thinner than the primary thickness, and the second buffer layer being atomically ordered according to CuPtB ordering;
• a first compound layer disposed above the second buffer layer, the first compound layer comprising a first monocrystalline material;
• and
• a second compound layer disposed above the first compound layer, the second compound layer comprising a second monocrystalline material;
• wherein the first compound layer comprises a first type of doping;
• wherein the second compound layer comprises a second type of doping;
• wherein the second buffer layer comprises a higher energy bandgap than the first buffer layer;
• and
• wherein the first compound layer and the second compound layer have a boron content of at least 7.6 mole %.

A photovoltaic cell, comprising:

• a substrate comprising at least one material selected from the group consisting of GaAs and GaAs nucleated Ge;
• a first buffer layer comprising atomically smooth GaAs and disposed above the substrate;
• a second buffer layer comprising CuPtB atomically ordered GaInP2 and disposed above the first buffer layer, the atomically ordered second buffer layer including successive monolayers of GaP and InP;
• a first compound layer disposed above the second buffer layer;
• and
• a second compound layer disposed above the first compound layer;
• wherein the first compound layer and the second compound layer comprise at least one material selected from the group consisting of:
• BGaAs, BInAs, BGaInAs, BGaAsSb, BGaInP, and BGaPSb, and wherein the first and the second compound layer have a boron content of at least 7.6 mole %, and wherein the first and the second compound layer have a bandgap width from about 1.0 eV to about 1.1 eV.

A solar cell, comprising:

• a substrate;
• a nucleation layer disposed above the substrate;
• an atomically smooth first buffer layer disposed above the nucleation layer;
• an atomically ordered second buffer layer disposed above the first buffer layer, wherein the second buffer layer includes successive monolayers of GaP and InP forming an CuPtB atomically ordered GaInP2 compound layer;
• a first solar cell disposed above the second buffer layer, wherein said first solar cell is manufactured from monocrystalline materials containing at least 7.6 mole % boron;
• a first window layer disposed above the first solar cell;
• a first tunnel junction layer disposed above the first window layer;
• a first back surface field layer disposed above the first tunnel junction layer;
• a second solar cell disposed above the first back surface field layer;
• a second window layer disposed above the second solar cell;
• a second tunnel junction layer disposed above the second window layer;
• a second back surface field layer disposed above the second tunnel junction layer;
• a third solar cell disposed above the second back surface field layer;
• and
• a third window layer disposed above the third solar cell.

A solar cell, comprising:

• a Ge substrate material;
• a Ge solar cell disposed above the Ge substrate material;
• a boron based solar cell with about a 1.0 eV to about 1.1 eV bandgap disposed above the Ge solar cell, the boron based solar cell containing at least 7.6 mole % boron;
• a GaAs solar cell disposed above the boron based solar cell;
• and
• a GaInP2 solar cell disposed above the GaAs solar cell.

A solar cell, comprising:

• a Ge substrate;
• a GaAs nucleation layer disposed above the substrate;
• a first atomically smooth GaAs buffer layer disposed above the nucleation layer, the first buffer layer being free of interstitial defects, the first buffer layer grown at a temperature from about 525° C. to about 575° C., subsequently annealed at a temperature from about 580° C. to about 700° C., and subsequently cooled at a temperature from about 525° C. to about 575° C.;
• a second atomically ordered buffer layer disposed above the first buffer layer, the second buffer layer including successive monolayers of GaP and InP forming an CuPtB ordered GaInP2 compound layer;
• a first compound layer disposed above the second buffer layer, the first compound layer including a boron compound with a boron content of at least 7.6 mole % as a solar cell base layer;
• a second compound layer disposed above the first compound layer, the second compound layer including a boron compound with a boron content of at least 7.6 mole % as a solar cell emitter layer;
• and
• a window layer disposed above the second compound layer;
• wherein the first compound layer comprises a first type of doping, wherein the second compound layer comprises a second type of doping, wherein the first compound layer and the second compound layer both comprise a bandgap width from about 1.0 eV to 1.1 eV;
• and
• wherein said second buffer layer comprises a higher energy bandgap than the first buffer layer.

A solar cell system, comprising:

• a solar array having at least one solar cell, the solar cell comprising:
• a GaAs single crystal substrate material;
• a first buffer layer disposed above the GaAs single crystal substrate material, the first buffer layer comprising:
• a primary thickness;
• and
• a first material, the first material being atomically smooth;
• a second buffer layer disposed above the first buffer layer, the second buffer layer comprising:
• a secondary thickness thinner than the primary thickness;
• and
• a second material, the second material being atomically ordered;
• wherein the second buffer layer comprises a higher energy bandgap than the first compound layer;
• a first compound layer disposed above the second buffer layer, the first compound layer comprising:
• a first type of doping;
• and
• a first single crystalline material having a boron content of at least 7.6 mole %;
• a second compound layer disposed above the first compound layer, the second compound layer comprising:
• a second type of doping;
• and
• a second single crystalline material having a boron content of at least 7.6 mole %;
• wherein the first compound layer comprises a similar energy bandgap as the second compound layer, the bandgap being about 1 eV;
• wherein either of the compound layers comprise a lower energy bandgap than the first buffer layer;
• wherein either of the compound layers comprise a lower energy bandgap than the second buffer layer;
• and
• a window layer disposed above the second compound layer.

A satellite system, comprising:

• a satellite;
• a solar cell array having at least one photovoltaic cell comprising:
• a substrate comprising at least one material selected from the group consisting of:
• GaAs and GaAs nucleated Ge;
• a first buffer layer disposed above the substrate, the first buffer layer being atomically smooth and comprising:
• a thickness from about 2000 Angstroms to about 1 micron of a GaAs material;
• and
• a bandgap width about 1.40 eV;
• an atomically ordered second buffer layer disposed above the first buffer layer, the second buffer layer comprising:
• successive monolayers of GaP and InP forming an CuPtB atomically ordered GaInP2 compound layer, the GaInP2 compound layer grown at a temperature between about 525° C. to about 575° C. using tertiary butyl phosphine as source gas;
• a thickness from about 2000 Angstroms to about 5000 Angstroms of a GaInP2 material;
• and
• a bandgap width about 1.83 eV;
• a first compound layer disposed above the second buffer layer, the first compound layer comprising:
• at least one of a first monocrystalline material selected from the group consisting of:
• BGaAs, BInAs, BGaInAs, BGaAsSb, BGaInP, and BGaPSb, the material having a boron content of at least 7.6 mole %;
• and
• a bandgap width from about 1.0 eV to about 1.1 eV;
• and
• a second compound layer disposed above the first compound layer, the second compound layer comprising:
• at least one of a second monocrystalline material selected from the group consisting of:
• BGaAs, BInAs, BGaInAs, BGaAsSb, BGaInP, and BGaPSb, the material having a boron content of at least 7.6 mole %;
• and
• a bandgap width from about 1.0 eV to about 1.1 eV.