Method for using data regarding manufacturing procedures integrated circuits (ICS) have undergone, such as repairs, to select procedures the ICS will undergo, such as additional repairs

A method of manufacturing integrated circuit Dynamic Random Access Memory (DRAM) semiconductor devices from semiconductor wafers, the method comprising:

• providing a plurality of semiconductor wafers;
• fabricating a plurality of Dynamic Random Access Memory (DRAM) semiconductor devices on each of the wafers;
• causing each Dynamic Random Access Memory (DRAM) semiconductor device of the plurality on each of the wafers to store a substantially unique identification code;
• storing data in association with the identification code of each Dynamic Random Access Memory (DRAM) semiconductor device of the plurality that identifies manufacturing procedures each Dynamic Random Access Memory (DRAM) semiconductor device has undergone, said storing data comprising storing data that identifies spare rows and columns used in repairing each DRAM semiconductor device;
• separating each Dynamic Random Access Memory (DRAM) semiconductor device of the plurality on each of the wafers from its wafer to form one Dynamic Random Access Memory (DRAM) semiconductor device of a plurality of Dynamic Random Access Memory (DRAM) semiconductor devices;
• assembling each Dynamic Random Access Memory (DRAM) semiconductor device into a Dynamic Random Access Memory (DRAM) semiconductor device assembly;
• automatically reading the identification code associated with each Dynamic Random Access Memory (DRAM) semiconductor device;
• and
• accessing the data stored in association with the identification code associated with each Dynamic Random Access Memory (DRAM) semiconductor device.

A method of manufacturing Multi-Chip Modules (MCM's) from semiconductor wafers, the MCM's selected from a group of Single In-Line Memory Modules (SIMM's) and Dual In-line Memory Modules (DIMM's), Rambus In-Line Memory Modules (RIMM), Small Outline Rambus In-Line Memory Modules (SO-RIMM), Personal Computer Memory Format (PCMCIA), and Board-Over-Chip type substrates, the method comprising:

• providing a plurality of semiconductor wafers;
• fabricating a plurality of semiconductor devices on each of the wafers;
• causing each semiconductor device of the semiconductor devices on each of the wafers to store a substantially unique identification code;
• storing data in association with the identification code of each semiconductor device of the semiconductor devices that identifies manufacturing procedures each semiconductor device of the semiconductor devices has undergone, said storing data including storing data that identifies rows and columns used in repairing a semiconductor device;
• separating each semiconductor device of the semiconductor devices on each wafer of the plurality of semiconductor wafers from its wafer to form one semiconductor device of a plurality of semiconductor devices;
• assembling one or more of the semiconductor devices into each of a plurality of MCM's;
• automatically reading the identification code of each semiconductor device of the semiconductor devices in each MCM of the plurality of MCM's;
• and
• accessing the data stored in association with the identification code of each semiconductor device of the semiconductor devices in each MCM of the plurality of MCM's.

A method of manufacturing Dynamic Random Access Memory (DRAM) semiconductor devices from semiconductor wafers, the method comprising:

• providing a plurality of semiconductor wafers;
• fabricating a plurality of Dynamic Random Access Memory (DRAM) semiconductor devices on each of the wafers;
• electronically probing each Dynamic Random Access Memory (DRAM) semiconductor device of the Dynamic Random Access Memory (DRAM) semiconductor devices on each wafer of the plurality of semiconductor wafers to identify good, bad and repairable semiconductor devices on each wafer of the plurality of semiconductor wafers;
• repairing the repairable Dynamic Random Access Memory (DRAM) semiconductor devices;
• programming each Dynamic Random Access Memory (DRAM) semiconductor device of the Dynamic Random Access Memory (DRAM) semiconductor devices on each wafer of the plurality of semiconductor wafers to store a unique fuse identification;
• storing data in association with the fuse identification of each of the Dynamic Random Access Memory (DRAM) semiconductor devices identifying repairs performed on each Dynamic Random Access Memory (DRAM) semiconductor device of the Dynamic Random Access Memory (DRAM) semiconductor devices, said storing data comprising storing data that identifies spare rows and columns used in repairing each DRAM semiconductor device;
• mounting each wafer of the plurality of semiconductor wafers on an adhesive film;
• sawing each Dynamic Random Access Memory (DRAM) semiconductor device of the Dynamic Random Access Memory (DRAM) semiconductor devices on each wafer of the plurality of wafers from its wafer to form one of a plurality of discrete Dynamic Random Access Memory (DRAM) semiconductor devices;
• automatically picking each Dynamic Random Access Memory (DRAM) semiconductor device of the Dynamic Random Access Memory (DRAM) semiconductor devices from its wafer;
• placing each Dynamic Random Access Memory (DRAM) semiconductor device of the Dynamic Random Access Memory (DRAM) semiconductor devices onto an epoxy-coated bonding site of one lead frame of a plurality of lead frames;
• curing the epoxy on the bonding site of each lead frame of the lead frames;
• wire bonding each Dynamic Random Access Memory (DRAM) semiconductor device of the Dynamic Random Access Memory (DRAM) semiconductor devices to its associated lead frame;
• encapsulating each Dynamic Random Access Memory (DRAM) semiconductor device of the Dynamic Random Access Memory (DRAM) semiconductor devices and its associated lead frame to form one of a plurality of Dynamic Random Access Memory (DRAM) semiconductor device assembly packages, each Dynamic Random Access Memory (DRAM) semiconductor device assembly package having projecting leads;
• curing each Dynamic Random Access Memory (DRAM) semiconductor device assembly package;
• de-flashing the projecting leads of each Dynamic Random Access Memory (DRAM) semiconductor device package;
• electroplating the projecting leads of each Dynamic Random Access Memory (DRAM) semiconductor device package;
• singulating each Dynamic Random Access Memory (DRAM) semiconductor device package;
• testing each Dynamic Random Access Memory (DRAM) semiconductor device assembly package for opens and shorts;
• burn-in testing each Dynamic Random Access Memory (DRAM) semiconductor device assembly package;
• back-end testing each Dynamic Random Access Memory (DRAM) semiconductor device assembly package;
• automatically reading an ID of each Dynamic Random Access Memory (DRAM) semiconductor device assembly package;
• accessing data stored in association with the ID of each Dynamic Random Access Memory (DRAM) semiconductor device assembly package;
• for any Dynamic Random Access Memory (DRAM) semiconductor device assembly package failing any one of the opens/shorts, burn-in, and back-end tests, evaluating the accessed data to determine whether the failing semiconductor device assembly package may be repaired;
• repairing the Dynamic Random Access Memory (DRAM) semiconductor device assembly package determined in accordance with the accessed data to be repairable and returning the repaired Dynamic Random Access Memory (DRAM) semiconductor device assembly package to the package to the semiconductor manufacturing process;
• and
• discarding the Dynamic Random Access Memory (DRAM) semiconductor device assembly package determined in accordance with the accessed data to be unrepairable.

A method of manufacturing Multi-Chip Modules (MCM's) from semiconductor wafers using Chip-On-Board (COB) techniques, the method comprising:

• providing a plurality of semiconductor wafers;
• fabricating a plurality of semiconductor devices on each wafer of the plurality of semiconductor wafers;
• electronically probing each semiconductor device of the semiconductor devices on each wafer of the plurality of semiconductor wafers to identify good, bad and repairable semiconductor devices on each wafer of the plurality of semiconductor wafers;
• repairing the repairable semiconductor devices;
• programming each semiconductor device of the plurality of semiconductor devices on each wafer of the plurality of semiconductor wafers to store a unique fuse identification;
• storing an electronic wafer map for each wafer of the plurality that identifies locations of good and bad semiconductor devices on each wafer and associates each semiconductor device on each wafer with its fuse identification;
• storing data in association with the fuse identification of each semiconductor device of the semiconductor devices identifying repairs performed on each semiconductor device of the semiconductor devices;
• mounting each wafer of the plurality of semiconductor wafers on an adhesive film;
• sawing each semiconductor device of the semiconductor devices on each wafer of the plurality of semiconductor wafers from its wafer to form one discrete semiconductor device;
• accessing the stored wafer map for each wafer of the plurality;
• accessing the stored data for each semiconductor device on each wafer of the plurality of semiconductor wafers;
• automatically picking each semiconductor device of the good semiconductor devices from its wafer;
• discarding non-picked semiconductor devices identified as bad by the accessed wafer maps;
• diverting picked semiconductor devices identified as good but unrepairable by the accessed wafer maps and data to a non-MCM semiconductor manufacturing process;
• placing picked semiconductor devices identified as good and repairable by the accessed wafer maps and data onto epoxy-coated bonding sites of a plurality of printed circuit boards using COB techniques to form a plurality of MCM's;
• curing the epoxy on the bonding sites of each MCM of the plurality of MCM's;
• wire bonding each of the semiconductor devices to its associated MCM;
• testing each semiconductor device of the semiconductor devices on each MCM of the plurality of MCM's for opens and shorts;
• encapsulating each semiconductor device of the semiconductor devices on each MCM of the plurality of MCM's;
• retesting each semiconductor device of the semiconductor devices on each MCM of the plurality of MCM's for opens and shorts;
• burn-in testing each semiconductor device of the semiconductor devices on each MCM of the plurality of MCM's;
• back-end testing each semiconductor device of the semiconductor devices on each MCM of the plurality of MCM's;
• automatically reading the fuse identification of each semiconductor device in each MCM of the plurality of MCM's;
• accessing the data stored in association with the fuse identification of each semiconductor device of the semiconductor devices;
• for any semiconductor device of the semiconductor devices failing any one of the opens/shorts, burn-in, and back-end tests, evaluating the accessed data to determine whether the failing semiconductor device may be repaired;
• repairing any semiconductor device of the semiconductor devices determined in accordance with the accessed data to be repairable and returning repaired MCM's to the manufacturing process;
• and
• replacing any semiconductor device of the semiconductor devices determined in accordance with the accessed data to be unrepairable with a Known Good Die (KGD) and returning the repaired MCM's to the manufacturing process.

A method of manufacturing Multi-Chip Modules (MCM's) from semiconductor wafers using flip-chip techniques, the method comprising:

• providing a plurality of semiconductor wafers;
• fabricating a plurality of semiconductor devices on each wafer of the semiconductor wafers;
• electronically probing each semiconductor device of the semiconductor devices on each wafer of the plurality of wafers to identify good, bad and repairable semiconductor devices on each wafer of the plurality of wafers;
• repairing the repairable semiconductor devices;
• programming each semiconductor device of the semiconductor devices on each wafer of the plurality of wafers to store a unique fuse identification;
• storing an electronic wafer map for each wafer of the plurality that identifies locations of good and bad semiconductor devices on each wafer and associates each semiconductor device on each wafer with its fuse identification;
• storing data in association with the fuse identification of each semiconductor device of the semiconductor devices identifying repairs performed on each semiconductor device of the semiconductor devices;
• mounting each wafer of the plurality of wafers on an adhesive film;
• sawing each semiconductor device of the semiconductor devices on each wafer of the wafers from its wafer to form a semiconductor device;
• accessing the stored wafer map for each wafer of the plurality;
• accessing the stored data for each semiconductor device of the semiconductor devices on each of the wafers;
• automatically picking each semiconductor device of the good semiconductor devices from its wafer;
• discarding non-picked semiconductor devices identified as bad by the accessed wafer maps;
• diverting picked semiconductor devices identified as good but unrepairable by the accessed wafer maps and data to a non-MCM device manufacturing process;
• flip-chip attaching picked semiconductor devices identified as good and repairable by the accessed wafer maps and data to bonding sites of each printed circuit board of a plurality of printed circuit boards to form a plurality of MCM's;
• curing each MCM of the plurality of MCM's;
• testing each semiconductor device of the semiconductor devices on each MCM of the plurality of MCM's for opens and shorts;
• encapsulating each semiconductor device of the semiconductor devices on each MCM of the plurality of MCM's;
• retesting each semiconductor device of the semiconductor devices on each MCM of the plurality of MCM's for opens and shorts;
• burn-in testing each semiconductor device of the semiconductor devices on each MCM of the plurality MCM's;
• back-end testing each semiconductor device of the semiconductor devices on each MCM of the plurality of MCM's;
• automatically reading the fuse identification of each semiconductor device of the semiconductor devices in each MCM of the plurality of MCM's;
• accessing the data stored in association with the fuse identification of each semiconductor device of the semiconductor devices in each MCM of the plurality of MCM's;
• for any semiconductor device of the semiconductor devices on each MCM of the plurality failing any one of the opens/shorts, burn-in, and back-end tests, evaluating the accessed data to determine whether the failing semiconductor devices may be repaired;
• repairing any semiconductor device of the semiconductor devices determined in accordance with the accessed data to be repairable and returning repaired MCM's to the manufacturing process;
• and
• replacing any semiconductor device of the semiconductor devices determined in accordance with the accessed data to be unrepairable with a Known Good Die (KGD) and returning the repaired MCM's to the manufacturing process.

A method in an integrated circuit semiconductor device in a Multi-Chip Module (MCM) manufacturing process for diverting good but unrepairable semiconductor devices from the process, the semiconductor devices being of the type to have a substantially unique identification code, the method comprising:

• storing data in association with the identification code of each semiconductor device of the semiconductor devices identifying semiconductor devices that are good and repairable, that are good but unrepairable, and that are bad;
• automatically reading the identification code of each semiconductor device of the semiconductor devices;
• accessing the data stored in association with the identification code of each semiconductor device of the semiconductor devices;
• diverting semiconductor devices identified as good but unrepairable by the accessed data to one of use in other semiconductor device manufacturing processes and discarding the semiconductor devices identified as good but unrepairable;
• and
• discarding semiconductor devices identified as bad by the accessed data.

A semiconductor device manufacturing process using data related to manufacturing procedures used previously that a plurality of integrated circuits of semiconductor devices have undergone for selecting manufacturing procedures the plurality of integrated circuits of the semiconductor devices are to undergo during manufacture, each semiconductor device having integrated circuits and having a substantially unique identification code, the manufacturing process comprising:

• storing data in association with the identification code of each semiconductor device of the semiconductor devices identifying manufacturing procedures the semiconductor device has undergone, said storing data comprising storing data that identifies repairs performed on each semiconductor device;
• automatically reading the identification code of each semiconductor device;
• and
• accessing the data stored in association with the identification code of each semiconductor device.

A method of manufacturing semiconductor devices from wafers, the method comprising:

• providing a plurality of wafers;
• fabricating a plurality of semiconductor devices on at least one wafer of the plurality of wafers;
• causing each semiconductor device of the plurality on the at least one wafer to store a substantially unique identification code, said causing each of the semiconductor devices to store a substantially unique identification code comprising applying a dot code to each of the semiconductor devices;
• storing data in association with the identification code of each semiconductor device that identifies manufacturing procedures each semiconductor device has undergone, said storing data comprising storing data that identifies rows and columns used in manufacturing procedures for repairing a semiconductor device;
• separating each semiconductor device on the at least one wafer from the at least one wafer to form at least one semiconductor device;
• assembling the at least one semiconductor device into a semiconductor device assembly;
• automatically reading the identification code associated with the at least one semiconductor device;
• and
• accessing the data stored in association with the identification code associated with the at least one semiconductor device.

A method of manufacturing semiconductor devices from a plurality of wafers, the method comprising:

• providing a plurality of wafers;
• fabricating a plurality of semiconductor devices on at least one wafer of the plurality of wafers;
• causing at least one semiconductor device of the plurality on the at least one wafer to store a substantially unique identification code;
• storing data in association with the identification code of the at least one semiconductor device identifying manufacturing procedures the at least one semiconductor device has undergone, said storing data comprising storing data that identifies repairs performed on each semiconductor device;
• separating the at least one semiconductor device and at least one other semiconductor device on the at least one wafer from the at least one wafer to form at least two semiconductor devices on a portion of the at least one wafer;
• assembling the at least two semiconductor devices into a semiconductor device assembly;
• automatically reading the identification code associated with the at least two semiconductor devices;
• and
• accessing the data stored in association with the identification code associated with the at least two semiconductor devices.

A method of manufacturing semiconductor devices from a plurality of wafers, the method comprising:

• providing a plurality of wafers;
• fabricating a plurality of semiconductor devices on at least one wafer of the plurality of wafers;
• causing at least one semiconductor device of the plurality on the at least one wafer to store a substantially unique identification code;
• storing data in association with the identification code of the at least one semiconductor device identifying manufacturing procedures the at least one semiconductor device has undergone, said storing data comprising storing data that identifies repairs performed on each semiconductor device;
• assembling the at least one wafer into a semiconductor device assembly;
• automatically reading the identification code associated with the at least one semiconductor device;
• and
• accessing the data stored in association with the identification code associated with the at least one semiconductor device.