Direct fet device for high frequency application
AssigneeInternational Rectifier Corporation
InventorJohn E. Larking
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Abstract
A source mounted semiconductor device package is described which includes a semiconductor die having first and second opposing major surfaces, first and second major electrodes disposed on respective major surfaces and a control electrode disposed on the second major surface, and a thin metal clip electrically connected to the first major electrode of the die. The thin metal clip has a relatively large surface area, and package resistance which is caused by skin effect phenomenon is reduced thereby in high frequency applications.
Claims15
A method for decreasing resistance in external connections of a semiconductor device package in high frequency applications, the method comprising:
- providing a semiconductor die having first and second major surfaces;
- providing first and second major electrodes on said respective major surfaces, and a control electrode disposed on said second major surface;
- and
- providing a silver-plated metal clip having a flat web portion and electrically connecting said metal clip to said first major surface, said metal clip being configured to reduce the resistance of said semiconductor package when a current is supplied to said semiconductor package at a high frequency, wherein said current is supplied by a voltage regulator module, or said current is supplied by a power buck converter.
Dependencies are inferred from the claim text.