Semiconductor device

A semiconductor device comprising:

• a semiconductor substrate;
• a first insulating layer formed above the semiconductor substrate, and comprising a first insulating material, a second insulating material and a first hole, the first insulating layer having a laminated structure with at least a first insulating film and a second insulating film;
• a second insulating layer formed on the first insulating layer, the second insulating layer having a groove connected to the first hole;
• a barrier metal layer formed on a surface of the first hole and the groove;
• and
• an electrically conducting layer comprising Cu formed on the barrier metal layer,
• wherein a composite linear expansivity a is expressed by the following formula:
• α
• =
• ∑
• i
• =
• 1
• ⁢
• ⁢
• v
• i
• ⁢
• α
• i
• where vi is a volume ratio of an i-th insulating material, and αi is a linear expansivity of the i-th insulating material, and the composite linear expansivity α of the first insulating layer within 6 μm from the first hole is 30×10−6 °C.−1 or less, and
• wherein a relative dielectric constant of the first insulating material is 3 or less, a Young's modulus of the first insulating material is 10 GPa or less, a linear expansivity of the first insulating material being greater than 30×10−6 °C.−1 and a linear expansivity of the second insulating material is 30×10−6 °C.−1 or less, and
• wherein the relative dielectric constant of the first insulating film is 3 or less, the Young's modulus of the first insulating film is 10 GPa or less, the linear expansivity of the first insulating film is greater than 30×10−6 °C.−1 and the linear expansivity of the second insulating film is 30×10−6 °C.−1 or less.

A semiconductor device comprising:

• a semiconductor substrate;
• an insulating layer formed above the semiconductor substrate, and having at least one of a hole and a groove;
• a barrier metal layer formed on a surface of at least one of the hole and groove;
• and
• an electrically conducting layer comprising Cu formed on the barrier metal layer,
• wherein at least a part of the insulating layer is formed of a composite film having dispersed in an insulating film with a relative dielectric constant of 3 or less, insulating particles whose linear expansivity is smaller than that of the insulating film.