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US 7,119,441 B2Granted
Semiconductor interconnect structure
AssigneeNEC Electronics Corporation
InventorsKoichi Ohto, Takayuki Matsui
Life of this patent
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Abstract
In a semiconductor device, an interlevel insulating film formed between a Cu interconnection, formed by damascene, and an upper metal interconnection layer on it has a multilayered structure made up of a Cu diffusion preventive insulating layer and another insulating film. The Cu diffusion preventive insulating layer has a multilayered structure made up of not less than two layers. A method for manufacturing the semiconductor device is also disclosed.
Claims9
A semiconductor interconnect structure comprising:
- a semiconductor substrate;
- a first insulating film directly on said substrate;
- a first interconnect through said first insulating film and directly contacting said substrate;
- a diffusion preventive insulating layer having a multilayered structure made of not less than two films comprising a first diffusion preventive insulating film disposed directly on said first insulating film and said first interconnect and a second diffusion preventive insulating film disposed directly on and being denser than the first diffusion preventive insulating film;
- a second insulating film directly on said diffusion preventive second insulating film;
- and
- a second interconnect through said first and second diffusion preventive insulating films and said second insulating film.
4 more elements
Dependencies are inferred from the claim text.