US 7,119,419 B2 · Detailed description of the presently preferred embodiments

Abstract

A memory device is proposed which enables to guarantee the operation of MRAM elements being magnetically shielded against a large external magnetic fields without being affected by an internal leakage magnetic field. The MRAM elements 30 which are shielded by magnetic shield layers 33, 34 are placed at an intermediate region 41 avoiding an edge region 43 and a center region 42 of the magnetic shield layers 33, 34 so that the MRAM element is secured to operate normally without being affected by the internal leakage magnetic field avoiding the edge region 43 where the magnetic shield effect is reduced by the exterior magnetic field, and avoiding the central region 42 where the internal leakage magnetic field is large.

Claims6

Dependent claims

A magnetic memory device constructed as a magnetic random access memory, said magnetic memory device comprising:

a memory element having a magnetization pinned layer in which the orientation of magnetization is pinned, and a magnetic layer in which the orientation of magnetization is changeable;
and
a magnetic shield layer for magnetically shielding said memory element, said memory element disposed so as to avoid an edge portion and a center portion of said magnetic shield layer;
wherein said memory element is disposed in a region between a position at 0.1 L inward from one side of said magnetic shield layer and a position at 0.15 L outward from the center of said magnetic shield layer toward one side thereof, where a length from one side of said magnetic shield layer to an opposed side thereof is L.

1 more element

Dependencies are inferred from the claim text.

Detailed description of the presently preferred embodiments

Life of this patent

Detailed description of the presently preferred embodiments

Life of this patent

Abstract

Claims6