Supercritical fluid-assisted deposition of materials on semiconductor substrates
AssigneeAdvanced Technology Materials, Inc.
InventorsChongying Xu, Thomas H. Baum, Michael B. Korzenski
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Abstract
Supercritical fluid-assisted deposition of materials on substrates, such as semiconductor substrates for integrated circuit device manufacture. The deposition is effected using a supercritical fluid-based composition containing the precursor(s) of the material to be deposited on the substrate surface. Such approach permits use of precursors that otherwise would be wholly unsuitable for deposition applications, as lacking requisite volatility and transport characteristics for vapor phase deposition processes.
Claims114
A deposition composition for depositing material on a substrate, said deposition composition comprising a supercritical fluid and a precursor of the material to be deposited on the substrate, wherein said precursor includes a metal atom, and wherein said material to be deposited comprises a material selected from the group consisting of high-k material, copper diffusion barrier material, nitride material, metal nitride material, barrier layer material, oxynitride barrier layer material, nitride barrier layer material, silicide barrier layer material, and copper seed layer material, with the proviso that when the material to be deposited comprises the copper seed layer material, the precursor comprises at least one copper precursor selected from the group consisting of copper (II) carboxylates, copper (I) cyclopentadienes, copper (I) phenyls, copper (I) amides, and Lewis base adducts of the aforementioned copper (I) species.
A deposition composition for depositing material on a substrate, said deposition composition comprising a supercritical fluid and a silicon precursor of the material to be deposited on the substrate, wherein the silicon precursor comprises a cyclosiloxane.
A deposition composition for depositing material on a substrate, said deposition composition comprising a supercritical fluid, a silicon precursor of the material to be deposited on the substrate, and cube monomers, wherein the silicon precursor comprises a silsesquioxane having the formula:
- wherein each R is independently selected from H, C1–C8 alkyl, C1–C8 alkenyl, C6–C10 aryl and C1–C8 alkoxy.
A deposition composition for depositing material on a substrate, said deposition composition comprising a supercritical fluid and a precursor of the material to be deposited on the substrate, wherein the precursor comprises at least one copper precursor selected from the group consisting of
- (1) Cu(pentafluorophenyl) pentamer
- (2) Cu(thd)2
- (3) Cu(dmhd)2
- (4) Cu(bzac)2
- (5) Cu(CHB)2
- (6) Cu(oxalate)
- (7) Cu(formate)2
- (8) Cu(acetate)2
- (9) (VTMS)Cu(hfac)
- (10) Cu(tod)2
- (11) CpCuPMe3
- (12) Cu(dibm)2
- (13) (CO)CuCl
- (14) (VCH)Cu(hfac)
- (15) Cu(tfbzm)2
- (16) (MHY)Cu(hfac)
- (17) (COD)Cu(hfac)
- (18) (DMCOD)Cu(hfac)
- wherein:
- bzac=1-phenylpentane-1,3-dionate
- COD=cyclooctadiene
- dibm=2,6-dimethylheptane-3,5-dionate
- dmhd=1,1-dimethylhexane-3,5-dionate
- MHY=2-methyl-1-hexene-3-yne
- tfbzm=1,1,1-trifluoro-4-phenylbutane-2,4-dionate
- thd=2,2,6,6-tetramethylheptane-3,5-dionate
- tod=2,2,7-trimethyloctane-3,5-dionate
- VCH=vinylcyclohexane
- CHB=cyclohexanebutyrate
- VTMS=vinyltrimethylsilane.
A deposition composition for depositing material on a substrate, said deposition composition comprising a supercritical fluid and a precursor of the material to be deposited on the substrate, wherein the material to be formed on the substrate consists essentially of a noble metal and/or a noble metal oxide, and wherein the precursor comprises a metal precursor selected from the group consisting of
- (i) metal carbonyls;
- (ii) metal (β-diketonate)x.L wherein x=1, 2 or 3 and L=Lewis base ligand;
- and
- (iii) mixed ligand compounds.
A method of forming a material on a substrate, comprising depositing the material on the substrate from a deposition composition comprising a precursor of said material, and a supercritical fluid, wherein said precursor includes a metal atom, and wherein said material to be deposited comprises a material selected from the group consisting of high-k material, copper diffusion barrier material, nitride material, metal nitride material, barrier layer material, oxynitride barrier layer material, nitride barrier layer material, silicide barrier layer material, and copper seed layer material, with the proviso that when the material to be deposited comprises the copper seed layer material, the precursor comprises at least one copper precursor selected from the group consisting of copper (II) carboxylates, copper (I) cyclopentadienes, copper (I) phenyls, copper (I) amides, and Lewis base adducts of the aforementioned copper (I) species.
A method of forming a material on a substrate, comprising depositing the material on the substrate from a deposition composition comprising a silicon precursor of said material and a supercritical fluid, wherein the silicon precursor comprises a cyclosiloxane.
A method of forming a material on a substrate, comprising depositing the material on the substrate from a deposition composition comprising a silicon precursor of said material, a supercritical fluid, and cube monomers, wherein the silicon precursor comprises a silsesquioxane having the formula:
- wherein each R is independently selected from H, C1–C8 alkyl, C1–C8 alkenyl, C6–C10 aryl and C1–C8 alkoxy.
A method of forming a material on a substrate, comprising depositing the material on the substrate from a deposition composition comprising a precursor of said material, and a supercritical fluid, wherein the precursor comprises at least one copper precursor selected from the group consisting of
- (1) Cu(pentafluoropbenyl) pentamer
- (2) Cu(thd)2
- (3) Cu(dmhd)2
- (4) Cu(bzac)2
- (5) Cu(CHB)2
- (6) Cu(oxalate)
- (7) Cu(formate)2
- (8) Cu(acetate)2
- (9) (VTMS)Cu(hfac)
- (10) Cu(tod)2
- (11) CpCuPMe3
- (12) Cu(dibm)2
- (13) (CO)CuCl
- (14) (VCH)Cu(hfac)
- (15) Cu(tfbzm)2
- (16) (MHY)Cu(hfac)
- (17) (COD)Cu(hfac)
- (18) (DMCOD)Cu(hfac)
- wherein:
- bzac=1-phenylpentane-1,3-dionate
- COD=cyclooctadiene
- dibm=2,6-dimethylheptane-3,5-dionate
- dmhd=1,1-dimethylhexane-3,5-dionate
- MHY=2-methyl-1-hexene-3-yne
- tfbzm=1,1,1-trifluoro-4-phenylbutane-2,4-dionate
- thd=2,2,6,6-tetramethylheptane-3,5-dionate
- tod=2,2,7-trimethyloctane-3,5-dionate
- VCH=vinylcyclohexane
- CHB=cyclohexanebutyrate
- VTMS=vinyltrimethylsilane.
A method of forming a material on a substrate, comprising depositing the material on the substrate from a deposition composition comprising a precursor of said material, and a supercritical fluid, wherein the material to be formed on the substrate consists essentially of a noble metal and/or a noble metal oxide, and wherein the precursor comprises a metal precursor selected from the group consisting of
- (i) metal carbonyls;
- (ii) metal (β-diketonate)x.L wherein x=1, 2 or 3 and L=Lewis base ligand;
- and
- (iii) mixed ligand compounds.
A method of forming a low k organosilicate film on a substrate, comprising contacting the substrate with a deposition composition comprising an organosilicon compound and a supercritical fluid,to deposit a silicon-containing material on the substrate, and vitrifying the silicon-containing material to form said low k organosilicate film as a porous organosilicate film on the substrate.
A method of forming a barrier layer on a substrate, comprising contacting the substrate in a contacting zone with a deposition composition comprising a barrier layer precursor and a supercritical fluid, and continuing said contacting while flowing the deposition composition into the contacting zone, and discharging contacted deposition composition from said contacting zone, to effect growth of the barrier layer to a predetermined thickness.
A deposition composition for depositing material on a substrate, said deposition composition comprising a supercritical fluid and a precursor of the material to be deposited on the substrate, wherein said precursor is selected from the group consisting of:
- a barrier layer precursor for forming a metal nitride barrier layer;
- a barrier layer precursor for forming a metal silicon nitride barrier layer;
- a barrier layer precursor for forming a metal oxynitride barrier layer;
- a precursor for forming a high k material on the substrate at deposition temperature below 300° C.;
- tetraphenyl lead;
- triphenyl bismuth;
- a precursor for forming a copper diffusion barrier material on the substrate;
- and at least one copper precursor selected from the group consisting of copper (II) carboxylates, copper (I) cyclopentadienes, copper (I) phenyls, copper (I) amides, and Lewis base adducts of the aforementioned copper (I) species.
A deposition composition for depositing material on a substrate, said deposition composition comprising a supereritical fluid and a silicon precursor, wherein the silicon precursor comprises at least one siloxane and at least one alkylsilane.
A method of forming a material on a substrate, comprising depositing the material on the substrate from a deposition composition comprising a silicon precursor, and a supercritical fluid, wherein the silicon precursor comprises at least one siloxane and at least one alkylsilane.
A deposition composition for depositing material on a substrate, said deposition composition comprising a supercritical fluid and a precursor of the material to be deposited on the substrate, wherein said precursor comprises a metal complex including at least one ligand selected from the group consisting of carboxylates, cyclopentadiene, phenyls, and amides.
Dependencies are inferred from the claim text.