Semiconductor device and fabrication method thereof
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsHaruyuki Sorada, Takeshi Takagi, Akira Inoue, Yoshio Kawashima
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Abstract
A semiconductor device of this invention includes: a semiconductor substrate; a gate electrode formed on the semiconductor substrate; a pair of source and drain electrodes respectively formed in regions of the semiconductor substrate situated on opposite sides of the gate electrode in a plan view; and a germanium-containing channel layer situated below the gate electrode to sandwich an gate insulator therebetween and intervening between the pair of source and drain electrodes, wherein a silicide layer forming at least a part of the source and drain electrodes has a lower germanium concentration than the channel layer.
Claims6
A semiconductor device comprising:
- a semiconductor substrate;
- a gate electrode formed on the semiconductor substrate;
- a pair of source and drain electrodes respectively formed in regions of the semiconductor substrate situated on opposite sides of the gate electrode in a plan view;
- and
- a channel layer situated below the gate electrode to sandwich an gate insulator therebetween and intervening between the pair of source and drain electrodes, wherein:
- at least one of the channel layer and an underlayer directly underlying the channel layer contains germanium;
- a silicide layer forming at least a part of the source and drain electrodes has a lower germanium concentration than one of the channel layer and the underlayer;
- and
- wherein the germanium concentration of the silicide layer is more than 0 atomic % and not more than 5 atomic %.
Dependencies are inferred from the claim text.