Monolithically integrated circuit comprising a thin film resistor, and fabrication method thereof
AssigneeInfineon Technologies AG
InventorsHans Norström, Ted Johansson
Life of this patent
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Abstract
A monolithically integrated circuit comprises a thin film resistor (8) with low resistance and low temperature coefficient; a high frequency lateral power transistor device (9) including gate (17), source (16) and drain (15) regions, and a Faraday shield layer region (22; 22′) above the gate region; and at least a first metallization layer (28) there above for electrical connection of the gate (17), source (16) and drain (15) regions through via holes filled with conductive material (29c–d). The thin film resistor (8) and the Faraday shield layer region (22; 22′) are made in the same conductive layer, which is arranged below the first metallization layer (28).
Claims13
A monolithically integrated circuit comprising:
- a thin film resistor,
- a high frequency lateral power transistor device including gate, source and drain regions, and a Faraday shield layer region above the gate region, and
- at least a first metallization layer there above for electrical connection of said gate, source and drain regions through via holes filled with conductive material, wherein
- said thin film resistor and said Faraday shield layer region are made in the same conductive layer, and
- said conductive layer is arranged below said at least first metallization layer.
Dependencies are inferred from the claim text.