US 7,119,410 B2 · Magneto-resistive effect element and magnetic memory · patentgrep

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Abstract

It is possible to perform a writing operation with low power consumption and a low current, and enhance reliability without causing element breakdown. There are provided a first magnetization-pinned layer including at least one magnetic film in which a magnetization direction is pinned; a second magnetization-pinned layer including at least one magnetic film in which a magnetization direction is pinned; a magnetic recording layer formed between the first magnetization-pinned layer and the second magnetization-pinned layer and including at least one magnetic film in which a magnetization direction is changeable by injecting spin-polarized electrons; a tunnel barrier layer formed between the first magnetization-pinned layer and the magnetic recording layer; and a nonmagnetic intermediate layer formed between the magnetic recording layer and the second magnetization-pinned layer. The magnetization direction of the magnetic film of the first magnetization-pinned layer on the magnetic recording layer side is substantially anti-parallel to the magnetization direction of the magnetic film of the second magnetization-pinned layer on the magnetic recording layer side.

Claims62

Dependent claims

A magneto-resistive effect element comprising:

a first magnetization-pinned layer including at least one magnetic film in which a magnetization direction is pinned;
a second magnetization-pinned layer including at least one magnetic film in which a magnetization direction is pinned;
a magnetic recording layer provided between the first magnetization-pinned layer and the second magnetization-pinned layer and including a single-layer magnetic film in which a magnetization direction is changeable by injecting spin-polarized electrons;
a first tunnel barrier layer provided between the first magnetization-pinned layer and the magnetic recording layer;
and
a second tunnel barrier layer provided between the magnetic recording layer and the second magnetization-pinned layer, and having a resistance different from that of the first tunnel barrier layer;
the magnetization direction of the magnetic film of the first magnetization-pinned layer on the magnetic recording layer side being substantially opposite to the magnetization direction of the magnetic film of the second magnetization-pinned layer on the magnetic recording layer side.

4 more elements

A magneto-resistive effect element comprising:

a first magnetization-pinned layer including at least one magnetic film in which a magnetization direction is pinned;
a second magnetization-pinned layer including at least one magnetic film in which a magnetization direction is pinned;
a magnetic recording layer provided between the first magnetization-pinned layer and the second magnetization-pinned layer and including a multi-layer structure having at least two magnetic films and a nonmagnetic film provided between the two magnetic films, in which magnetization directions are changeable by injecting spin-polarized electrons;
a first tunnel barrier layer provided between the first magnetization-pinned layer and the magnetic recording layer;
and
a second tunnel barrier layer provided between the magnetic recording layer and the second magnetization-pinned layer, and having a resistance different from that of the first tunnel barrier layer,
the magnetization direction of the magnetic film of the first magnetization-pinned layer on the magnetic recording layer side being substantially opposite to the magnetization direction of the magnetic film of the second magnetization-pinned layer on the magnetic recording layer side, and the magnetic recording layer having a ferromagnetic interaction between the magnetic films arranged through the nonmagnetic film.

4 more elements

A magneto-resistive effect element comprising:

a first magnetization-pinned layer including at least one magnetic film in which a magnetization direction is pinned;
a second magnetization-pinned layer including at least one magnetic film in which a magnetization direction is pinned;
a magnetic recording layer provided between the first magnetization-pinned layer and the second magnetization-pinned layer and having a two-layer structure having a soft magnetic film and a ferromagnetic film or a three-layer structure having two ferromagnetic films and a soft magnetic film provided between the two ferromagnetic films, and in which a magnetization direction is changeable by injecting spin-polarized electrons;
a first tunnel barrier layer provided between the first magnetization-pinned layer and the magnetic recording layer;
and
a second tunnel barrier layer provided between the magnetic recording layer and the second magnetization-pinned layer, and having a resistance different from that of the first tunnel barrier layer,
the magnetization direction of the magnetic film of the first magnetization-pinned layer on the magnetic recording layer side being substantially opposite to the magnetization direction of the magnetic film of the second magnetization-pinned layer on the magnetic recording layer side.

4 more elements

A magneto-resistive effect element comprising:

a first magnetization-pinned layer including at least one magnetic film in which a magnetization direction is pinned;
a second magnetization-pinned layer including at least one magnetic film in which a magnetization direction is pinned;
a magnetic recording layer provided between the first magnetization-pinned layer and the second magnetization-pinned layer and including a single-layer magnetic film in which a magnetization direction is changeable by injecting spin-polarized electrons;
a tunnel barrier layer provided between the first magnetization-pinned layer and the magnetic recording layer;
and
a nonmagnetic metal layer provided between the magnetic recording layer and the second magnetization-pinned layer, and formed of gold or silver,
the magnetization direction of the magnetic film of the first magnetization-pinned layer on the magnetic recording layer side being substantially opposite to the magnetization direction of the magnetic film of the second magnetization-pinned layer on the magnetic recording layer side.

4 more elements

A magneto-resistive effect element comprising:

a first magnetization-pinned layer including at least one magnetic film in which a magnetization direction is pinned;
a second magnetization-pinned layer including at least one magnetic film in which a magnetization direction is pinned;
a magnetic recording layer provided between the first magnetization-pinned layer and the second magnetization-pinned layer and including a multi-layer structure having at least two magnetic films and a nonmagnetic film provided between the two magnetic films, in which magnetization directions are changeable by injecting spin-polarized electrons;
a tunnel barrier layer provided between the first magnetization-pinned layer and the magnetic recording layer;
and
a nonmagnetic metal layer provided between the magnetic recording layer and the second magnetization-pinned layer,
the magnetization direction of the magnetic film of the first magnetization-pinned layer on the magnetic recording layer side being substantially opposite to the magnetization direction of the magnetic film of the second magnetization-pinned layer on the magnetic recording layer side, and the magnetic recording layer having a ferromagnetic interaction between the magnetic films arranged through the nonmagnetic film.

4 more elements

A magneto-resistive effect element comprising:

a first magnetization-pinned layer including at least one magnetic film in which a magnetization direction is pinned;
a second magnetization-pinned layer including at least one magnetic film in which a magnetization direction is pinned;
a magnetic recording layer provided between the first magnetization-pinned layer and the second magnetization-pinned layer and having a two-layer structure having a soft magnetic film and a ferromagnetic film or a three-layer structure having two ferromagnetic films and a soft magnetic film provided between the two ferromagnetic films, and in which a magnetization direction is changeable by injecting spin-polarized electrons;
a tunnel barrier layer provided between the first magnetization-pinned layer and the magnetic recording layer;
and
a nonmagnetic metal layer provided between the magnetic recording layer and the second magnetization-pinned layer,
the magnetization direction of the magnetic film of the first magnetization-pinned layer on the magnetic recording layer side being substantially opposite to the magnetization direction of the magnetic film of the second magnetization-pinned layer on the magnetic recording layer side.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application: 10/901,325Filed 29 Jul 2004
Priority: JP 2003-20378330 Jul 2003
Published: US 2005/0057960 A117 Mar 2005
Granted: 10 Oct 2006
Term ends: Not estimatedThe source records don’t support an estimate.

Classification6 codes

H10N 50/10
Galvanomagnetic devices: magnetoresistive devices
G11C 11/16
Using magnetic elements: using elements in which the storage effect is based on magnetic spin effect
H10B 61/22
Comprising components having three or more electrodes, e.g. transistors: of the field-effect transistor [FET] type
H10N
Electric solid-state devices not otherwise provided for

Family

US 2005/0057960 A1Pre-grant publication · published 17 Mar 2005
US 7,119,410 B2This patent

From the US filing history. Foreign family members aren’t listed.

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