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AssigneeRenesas Technology Corp.
InventorsShoji Shukuri, Norio Suzuki, Yasuhiro Taniguchi
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A method for manufacturing a semiconductor integrated circuit device including a first field effect transistor having a gate insulating film formed over a first element forming region of a main surface of a semiconductor substrate; and a second field effect transistor having a gate insulating film formed over a second element forming region of the main surface of the semiconductor substrate and made thinner than the gate insulating film of the first field effect transistor. The method comprises the steps of forming a thermally oxidized film over a first element forming region and a second element forming region of the main surface of the semiconductor substrate; forming a deposited film over the main surface of the semiconductor substrate including said thermally oxidized film; removing the deposited film and said thermally oxidized film from over the second element forming region; and forming a thermally oxidized film over the second element forming region to form a gate insulating film individually over the first element forming region and the second element forming region.
A semiconductor integrated circuit device, comprising:
A semiconductor integrated circuit device, comprising:
A semiconductor integrated circuit device, comprising:
A semiconductor integrated circuit device, comprising:
A semiconductor integrated circuit device, comprising:
A semiconductor integrated circuit device, comprising:
A semiconductor integrated circuit device comprising:
A semiconductor integrated circuit device comprising:
Dependencies are inferred from the claim text.