Implantation method to improve ESD robustness of thick gate-oxide grounded-gate NMOSFET's in deep-submicron CMOS technologies
AssigneeLSI Logic Corporation
InventorsJau-Wen Chen, Yoon Huh, Erhong Li
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Abstract
An implantation method to improve ESD robustness of thick-oxide grounded-gate NMOSFET's in deep-submicron CMOS technologies. Based on standard process flow in DGO, a thick gate-oxide ESD device is improved. Instead of using the standard I/O device, the ESD device uses the thin-oxide N-LDD implantation, and thus its ESD robustness is enhanced. This is performed by updating the logic Boolean operations of thick gate-oxide and thin gate-oxide N-LDD before fabricating the masks. In TGO, the intermediate-oxide ESD uses thin-oxide N-LDD implantation, and the thick-oxide ESD uses intermediate-oxide N-LDD implantation.
Claims3
An ESD protection circuit of a thick gate-oxide grounded-gate NMOSFET, said ESD protection circuit comprising:
- a substrate;
- a thick-oxide on the substrate;
- a first spacer on the substrate proximate the thick-oxide;
- and thin-oxide N-LDD implantation under the first spacer in the substrate;
- wherein the NMOSFET comprises an I/O which comprises a thick-oxide, a second spacer proximate the thick-oxide of the I/O, and thick-oxide N-LDD implantation disposed under the second spacer, wherein the thin-oxide N-LDD implantation has a higher doping concentration than does the thick-oxide N-LDD implantation which is disposed under the second spacer;
- wherein the NMOSFET comprises a core which comprises a thin-oxide, a third spacer proximate the thin-oxide of the core, and thin-oxide N-LDD implantation disposed under the third spacer, wherein the thin-oxide N-LDD implantation has substantially the same doping concentration than does the thin-oxide N-LDD implantation which is disposed under the third spacer.
Dependencies are inferred from the claim text.