Storage electrode of a semiconductor device and method of forming the same
AssigneeSamsung Electronics Co., Ltd.
InventorsKyoung-Seok Kim, Ki-Hyun Hwang, Hyo-Jung Kim, Hyeon-Deok Lee, Seok-Woo Nam
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Abstract
In a storage electrode of a semiconductor device, and a method of forming the same, the storage electrode includes an outer cylinder including a first outer cylindrical portion having a first outer diameter, and a second outer cylindrical portion that is formed on the first outer cylindrical portion and having a second outer diameter, which is less than the first outer diameter, the first and second outer cylindrical portions having substantially equal inner diameters, and an inner cylinder formed on inner surfaces of the outer cylinder.
Claims21
A storage electrode of a semiconductor device, comprising:
- an outer cylinder including a first outer cylindrical portion having a first outer diameter, and a second outer cylindrical portion that is formed on the first outer cylindrical portion and having a second outer diameter, which is less than the first outer diameter, the first and second outer cylindrical portions having substantially equal inner diameters;
- and
- an inner cylinder formed on inner surfaces of the outer cylinder.
A storage electrode of a semiconductor device, comprising:
- a cylinder body including an outer cylinder, and an inner cylinder formed on inner surfaces of the outer cylinder;
- and
- a hemispherical silicon grain (HSG) layer including a first HSG layer formed on upper inner side surfaces of the inner cylinder and having a first grain size, and a second HSG layer formed on lower inner side surfaces of the inner cylinder and having a second grain size, which is greater than the first grain size.
Dependencies are inferred from the claim text.