System and method of manufacturing a substrate device
AssigneeSeiko Epson Corporation
InventorsTakunori Iki, Tomohiko Hayashi
Life of this patent
Estimating the term…
Abstract
The invention provides a substrate device having thin film transistors (TFTs), each including a semiconductor layer and capacitors formed above the TFTs, that are provided on a substrate. Each of the capacitors can include a first electrode electrically connected to a part of the semiconductor layer, a second electrode arranged to face the first electrode, and a dielectric film including a nitride film arranged between the first electrode and the second electrode on the substrate. Further, the nitride film has an aperture facing the semiconductor layer as seen in plan view. Accordingly, it is possible to effectively hydrogenate the semiconductor layer using the aperture.
Claims13
A substrate device, comprising:
- thin film transistors provided above a substrate, each including a semiconductor layer;
- and
- capacitors formed above the thin film transistors, each of the capacitors comprising a first electrode electrically connected to a part of the semiconductor layer, a second electrode arranged to face the first electrode, and a dielectric film including a nitride film arranged between the first electrode and the second electrode such that the first electrode is at a bottom surface of the nitride film and the second electrode is at a top surface of the nitride film;
- the nitride film having an aperture formed vertically above the semiconductor layer in plan view.
An electro-optical device, comprising:
- scanning lines extending above a substrate;
- data lines extending in a direction intersecting the scanning lines;
- thin film transistors formed to correspond to each intersection between the scanning lines and the data lines, each including a semiconductor layer;
- pixel electrodes provided to correspond to the thin film transistors;
- and
- storage capacitors formed above the thin film transistors, each of the storage capacitors comprising a first electrode electrically connected to a part of the semiconductor layer, a second electrode arranged to face the first electrode, and a dielectric film including a nitride film arranged between the first electrode and the second electrode such that the first electrode is at a bottom surface of the nitride film and the second electrode is at a top surface of the nitride film;
- the nitride film having an aperture formed vertically above the semiconductor layer in plan view.
An electronic apparatus, comprising:
- scanning lines extending above a substrate;
- data lines extending in a direction intersecting the scanning lines;
- thin film transistors formed to correspond to each of intersections between the scanning lines and the data lines, each including a semiconductor layer;
- pixel electrodes provided to correspond to the thin film transistors;
- and
- storage capacitors formed above the thin film transistors, each of the storage capacitors comprising a first electrode electrically connected to a part of the semiconductor layer, a second electrode arranged to face the first electrode, and a dielectric film including a nitride film arranged between the first electrode and the second electrode such that the first electrode is at a bottom surface of the nitride film and the second electrode is at a top surface of the nitride film;
- the nitride film having an aperture formed vertically above the semiconductor layer in plan view.
Dependencies are inferred from the claim text.