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US 7,119,385 B2Granted
Semiconductor apparatus having first and second gate electrodes
AssigneeKabushiki Kaisha Toshiba
InventorsKoji Usuda, Shinichi Takagi
Life of this patent
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Abstract
A semiconductor apparatus includes a substrate, a buffer layer made of a monocrystal semiconductor material and formed on the substrate, a strained-Si layer formed on the buffer layer and having a lattice constant different from that of the buffer layer, a monocrystal insulating film formed on the strained-Si layer and made of a material having a rare earth structure with a lattice constant different from that of Si, and an electrode formed on the insulating film.
Claims7
A semiconductor apparatus comprising:
- a substrate;
- an insulating film formed on the substrate;
- a first gate electrode made of a first monocrystal semiconductor material formed on the insulating film;
- a first gate insulating film made of a first monocrystal rare earth oxide and formed on the first gate electrode;
- a monocrystal strained Si layer formed on the first gate insulating film to be in contact with the first gate insulating film;
- a second gate insulating film made of a second monocrystal rare earth oxide and formed at a position opposed to the first gate insulating film on the monocrystal strained Si layer to be in contact with the monocrystal strained Si layer;
- and
- a second gate electrode made of a second monocrystal semiconductor material and formed on the second gate insulating film.
5 more elements
Dependencies are inferred from the claim text.