Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making, and integrated circuits incorporating the transistors

A junction field-effect transistor comprising:

• a substrate having opposed first and second major surfaces;
• a drain layer of an n-type semiconductor material on the first major surface of the substrate;
• a drift layer of an n-type semiconductor material on and non-coextensive with the drain layer such that portions of the drain layer are exposed, the drift layer having a lower conductivity than the drain layer;
• one or more discrete raised regions in spaced relation on the drain layer, each of the raised regions comprising a channel region of an n-type semiconductor material on the drift layer and a source region of an n-type semiconductor material on the channel region, the material of the source region having a higher conductivity than that of the channel region;
• a gate region of a p-type semiconductor material on the drift layer adjacent the one or more raised regions and forming a rectifying junction with n-type material of the drift layer and the channel region(s);
• and
• ohmic contacts on the gate and source regions and on exposed portions of the drain layer.