Gallium nitride based light emitting device and the fabricating method for the same
AssigneeSupernova Optoelectronics Corp.
InventorsSchang-Jing Hon, Mu-Jen Lai
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Abstract
A GaN-based light-emitting device and the fabricating method for the same are described. The light-emitting device is a light-emitting body with a light extraction layer thereon. The light-emitting body has some GaN-based layers and is capable of emitting a light when energy is applied. The light extraction layer is a double layered structure having a current spreading layer and a micro-structure layer, or a single layered structure without the current spreading layer. The micro-structure layer is a TiN layer with a nano-net structure obtained by nitridation of a Ti layer or a Pt layer with metal clusters thereon obtained by annealing of a Pt layer.
Claims5
A gallium nitride (GaN) based light-emitting device (LED), comprising:
- a light-emitting body comprising a GaN-based material capable of emitting a light;
- and
- a light extraction layer comprising:
- a current spreading layer disposed over said light-emitting body;
- and
- a micro-structure layer disposed over said current spreading layer and being a Pt layer having metal clusters.
Dependencies are inferred from the claim text.