US 7,119,366 B2 · Semiconductor device, EL display device, liquid crystal display device, and calculating device

Abstract

There is provided a semiconductor device able to increase the mobility of carriers and reduce the current in the OFF state. The semiconductor device includes a gate electrode, an insulating layer on the gate electrode, a first electrode on the insulating layer, a second electrode on the insulating layer at an interval with the first electrode, an organic semiconductor layer disposed in the interval between the first electrode and the second electrode and covering at least part of the first electrode and the second electrode, and a first resistance layer formed on the organic semiconductor layer and having an electrical resistance lower than that of the organic semiconductor layer. The first resistance layer is formed from conductive polymers.

Drawings

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Drawings

Claims30

Dependent claims

A semiconductor device, comprising:

a gate electrode;
an insulating layer on the gate electrode;
a first electrode on the insulating layer;
a second electrode on the insulating layer at an interval with the first electrode;
an organic semiconductor layer disposed in the interval between the first electrode and the second electrode, covering and contacting at least part of the first electrode and the second electrode;
end
a first resistance layer formed on the organic semiconductor layer and having an electrical resistance lower than an electrical resistance of the organic semiconductor layer;
and
a second resistance layer formed at least at one of the position between the first resistance layer and the organic semiconductor layers the position between the first electrode and the organic semiconductor layer, and the position between the second electrode and the organic semiconductor layer,
wherein the first resistance layer is formed from a metal selected from the group consisting of chromium (Cr), tantalum (Ta), titanium (Ti), copper (Cu), aluminum (Al), molybdenum (Mo), tungsten (W), nickel (Ni), gold (Au), palladium (Pd), platinum (Pt), silver (Ag), or tin (Sn), and
wherein the second resistance layer has an electrical resistance so that carriers in the organic semiconductor layer am allowed to tunnel through the second resistance layer when a voltage of a predetermined value or more than the predetermined value is applied across the second resistance layer.

8 more elements

A semiconductor device, comprising:

a gate electrode;
an insulating layer on the gate electrode;
a first electrode on the insulating layer;
a second electrode on the insulating layer at an interval with the first electrode;
an organic semiconductor layer disposed in the interval between the first electrode and the second electrode, covering and contacting at least part of the first electrode and the second electrode;
and
a first resistance layer formed on the organic semiconductor layer and having an electrical resistance lower than an electrical resistance of the organic semiconductor layer,
wherein one of the first electrode and the second electrode is in contact with the first resistance layer.

5 more elements

Dependencies are inferred from the claim text.

Description15,161 words

Summary3,741 words

#1. Field of the Invention

#The present invention relates to a semiconductor device able to improve a mobility of carriers, and an EL (electroluminescent) display device, a liquid crystal display device, and a calculating device utilizing the semiconductor device.

#2. Description of the Related Art

Brief description of the drawings30 figures

#FIG. 1 is a sectional view showing a configuration of an active device 20 according to a first embodiment of the present invention;

#FIGS. 2A and 2B are perspective views of active devices according to the first embodiment of the present invention, where FIG. 2A shows an active device having a plate-shaped low resistance layer, and FIG. 2B shows an active device having an inter-digital shaped low resistance layer;

#FIG. 3 is a sectional view of the active device 20 in FIG. 1 connected to power supplies;

Detailed description10,748 words

#Below, preferred embodiments of the present invention will be explained with reference to the accompanying drawings. Note that in the following descriptions, the same reference numerals are used for the same elements, the elements indicated by the same reference numerals are formed from the same materials, and the overlapping descriptions are omitted.

#The First Embodiment

#FIG. 1 shows a sectional view of an active device 20 according to a first embodiment of the present invention.

Facts

Application

10/618,650Filed 15 Jul 2003

Priority

JP 2002-21268522 Jul 2002

Published

US 2004/0061141 A11 Apr 2004

Granted

10 Oct 2006

Term ended

19 Jan 2024

Estimated · how

20 years from earliest known nonprovisional domestic filing plus recorded patent term adjustment, including 188 days of adjustment. Maintenance-fee lapses, terminal disclaimers and statutory extensions have not been checked. The continuity chain may be incomplete; this is not an enforceability determination.

Classification18 codes

H10K 10/468
Insulated gate field-effect transistors [IGFETs]: characterised by the gate dielectrics
H10K 10/46
Organic transistors: field-effect transistors, e.g. organic thin-film transistors [OTFT]
H10K 10/491
Insulated gate field-effect transistors [IGFETs]: vertical transistors, e.g. vertical carbon nanotube field effect transistors [CNT-FETs]
H10K 85/631
Organic compounds having low molecular weight: amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine

Timeline

22 Jul 2002Priority claimedJP 2002-212685
15 Jul 2003Application filedUS 10/618,650
17 Nov 2003Assigned to Ricoh Company, Ltd.assignment of assignor's interest
1 Apr 2004PublishedUS 2004/0061141 A1
10 Oct 2006GrantedUS 7,119,366 B2
19 Jan 2024Term endedEstimated, includes 188 days of adjustment

Semiconductor device, EL display device, liquid crystal display device, and calculating device

Life of this patent

Semiconductor device, EL display device, liquid crystal display device, and calculating device

Life of this patent

Life of this patent

Abstract

Drawings

Drawings

Claims30

Description15,161 words

Drawings

Classification18 codes

Life of this patent

Description15,161 words