Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate

A semiconductor device, including a polycrystalline Si thin film and a single crystal Si thin film that are provided on an insulating substrate made of high-strain-point glass, which is made by the steps of:

• depositing a first SiO2 film and an amorphous Si film sequentially on a surface of the insulating substrate;
• growing a polycrystalline Si layer, by thermally crystallizing the amorphous Si film, so as to form the polycrystalline Si thin film;
• removing a predetermined area of the polycrystalline Si layer by etching;
• cutting a single crystal Si substrate made at a size not larger than wafer size used in LSI manufacture into a predetermined shape so as to partially or substantially entirely cover the predetermined area that has been subjected to the etching, said single crystal Si substrate having a surface which has been oxidized or on which an SiO2 film has been deposited, and having a hydrogen ion implantation portion in which hydrogen ions of a predetermined dose have been implanted to a predetermined depth, the single crystal Si substrate being provided on only a partial area of the first SiO2 layer;
• bonding a hydrogen ion implantation surface of the single crystal Si substrate that has been cut into the predetermined shape to the predetermined area that has been subjected to the etching;
• dividing the single crystal Si substrate at the hydrogen ion implantation portion in an exfoliating manner by performing a heating process, so as to form at least the single crystal Si thin film, and wherein the single crystal Si thin film and the polycrystalline Si layer are at least partially provided at different elevations,
• wherein the single crystal Si thin film and the polycrystalline Si layer are each semiconductor layers as active layers of respective transistors in the semiconductor device;
• and
• wherein a maximum size of the single crystal Si thin film is not more than 10 cm.

A semiconductor device, including a polycrystalline Si thin film and a single crystal Si thin film t hat are provided on an insulating substrate made of high-strain-point glass, which is made by the steps of:

• depositing a first SiO2 film and an amorphous Si film sequentially on a surface of the insulating substrate;
• growing a polycrystalline Si layer, by thermally crystallizing the amorphous Si film, so as to form the polycrystalline Si thin film;
• removing a predetermined area of the polycrystalline Si layer by etching;
• cutting a single crystal Si substrate made at a size not larger than wafer size used in LSI manufacture into a predetermined shape so as to partially or substantially entirely cover the predetermined area that has been subjected to the etching, said single crystal Si substrate having a surface which has been oxidized or on which an SiO2 film has been deposited, and having a hydrogen ion implantation portion in which hydrogen ions of a predetermined dose have been implanted to a predetermined depth, the single crystal Si substrate being provided on only a partial area of the first SiO2 layer;
• bonding a hydrogen ion implantation surface of the single crystal Si substrate that has been cut into the predetermined shape to the predetermined area that has been subjected to the etching;
• dividing the single crystal Si substrate at the hydrogen ion implantation portion in an exfoliating manner by performing a heating process, so as to form at least the single crystal Si thin film, and wherein the single crystal Si thin film and the polycrystalline Si layer are at least partially provided at different elevations,
• wherein the single crystal Si thin film and the polycrystalline Si layer are each semiconductor layers as active layers of respective transistors in the semiconductor device;
• and
• wherein a maximum size of the single crystal Si thin film is not more than 5 cm.

A semiconductor device, including a polycrystalline Si thin film and a single crystal Si thin film that are provided on an insulating substrate made of high-strain-point glass, which is made by the steps of:

• depositing a first SiO2 film and an amorphous Si film sequentially on a surface of the insulating substrate;
• growing a polycrystalline Si layer, by thermally crystallizing the amorphous Si film, so as to form the polycrystalline Si thin film;
• removing a predetermined area of the polycrystalline Si layer by etching, and removing a part of the SiO2 film, that corresponds to the predetermined area, in a direction of thickness of the SiO2 film by etching;
• cutting a single crystal Si substrate made at a size not larger than wafer size used in LSI manufacture into a predetermined shape so as to partially or substantially entirely cover the predetermined area that has been subjected to the etching, said single crystal Si substrate having a surface which has been oxidized or on which the SiO2 film has been deposited, and having a hydrogen ion implantation portion in which hydrogen ions of a predetermined dose have been implanted to a predetermined depth, the single crystal Si substrate being provided on only a partial area of the first SiO2 layer;
• bonding a hydrogen ion implantation surface of the single crystal Si substrate that has been cut into the predetermined shape to the predetermined area that has been subjected to the etching;
• dividing the single crystal Si substrate at the hydrogen ion implantation portion in an exfoliating manner by performing a heating process, so as to form at least the single crystal Si thin film, and wherein the single crystal Si thin film and the polycrystalline Si layer are at least partially provided at different elevations,
• wherein the single crystal Si thin film and the polycrystalline Si layer are each semiconductor layers as active layers of respective transistors in the semiconductor device;
• and
• wherein a maximum size of the single crystal Si thin film is not more than 10 cm.

A semiconductor device, including a polycrystalline Si thin film and a single crystal Si thin film that are provided on an insulating substrate made of high-strain-point glass, which is made by the steps of:

• depositing a first SiO2 film and an amorphous Si film sequentially on a surface of the insulating substrate;
• growing a polycrystalline Si layer, by thermally crystallizing the amorphous Si film, so as to form the polycrystalline Si thin film;
• removing a predetermined area of the polycrystalline Si layer by etching, and removing a part of the SiO2 film, that corresponds to the predetermined area, in a direction of thickness of the SiO2 film by etching;
• cutting a single crystal Si substrate made at a size not larger than wafer size used in LSI manufacture into a predetermined shape so as to partially or substantially entirely cover the predetermined area that has been subjected to the etching, said single crystal Si substrate having a surface which has been oxidized or on which the SiO2 film has been deposited, and having a hydrogen ion implantation portion in which hydrogen ions of a predetermined dose have been implanted to a predetermined depth, the single crystal Si substrate being provided on only a partial area of the first SiO2 layer;
• bonding a hydrogen ion implantation surface of the single crystal Si substrate that has been cut into the predetermined shape to the predetermined area that has been subjected to the etching;
• dividing the single crystal Si substrate at the hydrogen ion implantation portion in an exfoliating manner by performing a heating process, so as to form at least the single crystal Si thin film, and wherein the single crystal Si substrate and the polycrystalline Si layer are at least partially provided at different elevations in the semiconductor device,
• wherein the single crystal Si thin film and the polycrystalline Si layer are each semiconductor layers as active layers of respective transistors in the semiconductor device;
• and
• wherein a maximum size of the single crystal Si thin film is not more than 5 cm.

A semiconductor device, including a polycrystalline Si thin film and a single crystal Si thin film that are provided on an insulating substrate made of high-strain-point glass, which is made by the steps of:

• depositing a first SiO2 film on a surface of the insulating substrate;
• removing a predetermined area of the SiO2 film, in a direction of thickness of the SiO2 film by etching;
• cutting a single crystal Si substrate made at a size not larger than wafer size used in LSI manufacture into a predetermined shape so as to partially or substantially entirely cover the predetermined area that has been subjected to the etching, said single crystal Si substrate having a surface which has been oxidized or on which an SiO2 film has been deposited, and having a hydrogen ion implantation portion in which hydrogen ions of a predetermined dose have been implanted to a predetermined depth, the single crystal Si substrate being provided on only a partial area of the first SiO2 layer;
• bonding a hydrogen ion implantation surface of the single crystal Si substrate that has been cut into the predetermined shape to the predetermined area that has been subjected to the etching;
• and
• dividing the single crystal Si substrate at the hydrogen ion implantation portion in an exfoliating manner by performing a heating process, so as to form at least the single crystal Si thin film;
• depositing a second SiO2 film and an amorphous Si film sequentially on a surface of the insulating substrate;
• and
• growing a polycrystalline Si layer, by thermally crystallizing the amorphous Si film, so as to form at least the polycrystalline Si thin film, wherein
• a maximum size of the single crystal Si thin film is not more than 10 cm, and wherein the single crystal Si thin film and the polycrystalline Si layer are at least partially provided at different elevations in the semiconductor device;
• and
• wherein the single crystal Si thin film and the polycrystalline Si layer are each semiconductor layers as active layers of respective transistors in the semiconductor device.

A semiconductor device, including a polycrystalline Si thin film and a single crystal Si thin film that are provided on an insulating substrate made of high-strain-point glass, which is made by the steps of:

• depositing a first SiO2 film on a surface of the insulating substrate;
• removing a predetermined area of the SiO2 film, in a direction of thickness of the SiO2 film by etching;
• cutting a single crystal Si substrate made at a size not larger than wafer size used in LSI manufacture into a predetermined shape so as to partially or substantially entirely cover the predetermined area that has been subjected to the etching, said single crystal Si substrate having a surface which has been oxidized or on which an SiO2 film has been deposited, and having a hydrogen ion implantation portion in which hydrogen ions of a predetermined dose have been implanted to a predetermined depth, the single crystal Si substrate being provided on only a partial area of the first SiO2 layer;
• bonding a hydrogen ion implantation surface of the single crystal Si substrate that has been cut into the predetermined shape to the predetermined area that has been subjected to the etching;
• and
• dividing the single crystal Si substrate at the hydrogen ion implantation portion in an exfoliating manner by performing a heating process, so as to form at least the single crystal Si thin film;
• depositing a second SiO2 film and an amorphous Si film sequentially on a surface of the insulating substrate;
• and
• growing a polycrystalline Si layer, by thermally crystallizing the amorphous Si film, so as to form the polycrystalline Si thin film, wherein
• a maximum size of the single crystal Si thin film is not more than 5 cm, and wherein the single crystal Si thin film and the polycrystalline Si layer are at least partially provided at different elevations in the semiconductor device;
• and
• the single crystal Si thin film and the polycrystalline Si layer are each semiconductor layers as active layers of respective transistors in the semiconductor device.

A semiconductor device comprising

• a polycrystalline Si thin film and a single crystal Si thin film that are provided on different areas of an insulating substrate;
• wherein a thickness of the single crystal Si thin film is not more than 100 nm, and wherein the single crystal Si thin film and the polycrystalline Si layer are at least partially provided at different elevations in the semiconductor device;
• and
• wherein the single crystal Si thin film and the polycrystalline Si layer are each semiconductor layers as active layers of respective transistors in the semiconductor device.