Semiconductor device and manufacturing method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
Life of this patent
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Abstract
A high performance electric device which uses an adhesive layer over a substrate. A color filter is over a substrate, and an adhesive layer is also located over the substrate and color film. An insulating layer is over the adhesive layer, and thin film transistors cover the insulating film and the color filters. Light emitting elements cover the thin film transistors and emit light through the substrate that is through the adhesive layer and color filter. The substrate may be plastic, thus increasing the heat resistance.
Claims30
A semiconductor device comprising:
- color filters over a substrate;
- an adhesive layer over the substrate and the color filters;
- an insulating film on said adhesive layer;
- a plurality of TFTs over the insulating film and the color filters, the TFTs including channel forming regions;
- and
- a liquid crystal layer over the TFTs,
- wherein said color filters are provided at positions aligned with at least the channel forming regions of said TFTs.
A semiconductor device comprising:
- at least one color filter over a substrate;
- an adhesive layer over the substrate and the at least one color filter;
- an insulating film on the adhesive layer;
- and
- at least one TFT over the insulating film and the at least one color filter, the TFT including a channel forming region;
- wherein said color filter is provided at a position aligned with at least the channel forming region of said TFT.
A semiconductor device comprising:
- at least one color filter over a substrate;
- an adhesive layer over the substrate and the at least one color filter;
- an insulating film on the adhesive layer;
- at least one TFT, over the insulating film and the at least one color filter, the TFT including a channel forming region;
- and
- a liquid crystal layer over the at least one TFT,
- wherein said color filter is provided at a position aligned with at least the channel forming region of said TFT.
A semiconductor device comprising:
- at least one color filter over a substrate;
- an adhesive layer over the substrate and the at least one color filter;
- an insulating film on the adhesive layer;
- at least one TFT over the insulating film and the at least one color filter, the TFT including a channel forming region;
- and
- an interlayer insulating film over the at least one TFT,
- wherein said color filter is provided at a position aligned with at least the channel forming region of said TFT.
A semiconductor device comprising:
- at least one color filter over a substrate;
- an adhesive layer over the substrate and the at least one color filter;
- an insulating film on the adhesive layer;
- at least one TFT over the insulating film and the at least one color filter, the TFT including a channel forming region;
- an interlayer insulating film over the at least one TFT;
- and
- a pixel electrode over the interlayer insulating film,
- wherein said color filter is provided at a position aligned with at least the channel forming region of said TFT.
A semiconductor device comprising:
- at least one color filter over a first substrate;
- an adhesive layer over the substrate and the at least one color filter;
- an insulating film on the adhesive layer;
- and
- at least one TFT over the insulating film and the at least one color filter, the TFT including a channel forming region;
- and
- a second substrate over the at least one TFT,
- wherein said color filter is provided at a position aligned with at least the channel forming region of said TFT.
Dependencies are inferred from the claim text.