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US 7,119,361 B2Granted
Luminescence stabilization of anodically oxidized porous silicon layers
AssigneeNational Research Council
InventorsDavid John Lockwood, Rabah Boukherroub, Danial D. M. Wayner, Nobuyoshi Koshida
Life of this patent
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Abstract
A porous silicon structure is stabilized by anodically oxidizing the structure and then subjecting it to chemical functionalization to protect non-oxidized surface regions, preferably in the presence of 1-decene under thermal conditions. This process creates a protective organic monolayer on the surface of the structure, rendering it highly stable.
Claims13
An optoelectronic device comprising:
- a substrate;
- a porous silicon with region formed within said substrate, said porous silicon substrate having an anodically oxidized surface with oxidized and non-oxidized regions;
- an organic stabilization layer attached to said anodically oxidized surface;
- and
- an electrical contact layer over said porous silicon region.
2 more elements
An optical, electronic, or optoelectronic sensor comprising a porous silicon structure having an anodically oxidized surface with oxidized and non-oxidized regions;
- and an organic layer attached to said anodically oxidized surface.
Dependencies are inferred from the claim text.