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US 7,119,355 B2Granted
Lateral phase change memory and method therefor
AssigneeIntel Corporation
InventorGuy C. Wicker
Life of this patent
Estimating the term…
Abstract
Briefly, in accordance with an embodiment of the invention, a lateral phase change memory and a method to manufacture a phase change memory is provided. The method may include forming a conductor material over a substrate and patterning the conductor material to form two electrodes from the conductor material, wherein the two electrodes are separated by a sub-lithographic distance. The method may further include forming a phase change material between the two electrodes.
Claims10
A method, comprising:
- forming a conductor material over a substrate;
- removing a portion of the conductor material to form two electrodes from the conductor material, wherein the two electrodes are separated by a sub-lithographic distance;
- and
- forming a phase change material between the two electrodes.
1 more element
Dependencies are inferred from the claim text.