US 7,119,354 B2 · Composition for forming porous film, porous film and method for forming the same, interlevel insulator film

Abstract

Provided is a coating liquid which can easily form a porous film having desirably controlled thickness by the method used for a usual semiconductor process, and having an excellent mesopore channel structure. Specifically provided is a composition for forming porous film comprising a surfactant, an aprotic polar solvent and a solution comprising a polymer formed by hydrolysis and condensation of one or more silane compounds represented by foramula (1): RnSi(OR′)4-n. Also provided is a method for manufacturing a porous film comprising steps of applying said composition so as to form a film, drying the film and transforming the dried film to a porous film by removing said surfactant. The porous film obtained from the composition for forming porous film is further provided.

Claims8

Dependent claims

A composition for forming a porous film comprising a surfactant, an aprotic polar solvent and a solution comprising a polymer formed by hydrolysis and condensation of one or more silane compounds represented by formula (1):

RnSi(OR′)4-n
wherein each R independently represents a linear or branched alkyl group having 1 to 8 carbons or an aryl group, and when there are two or more Rs, each R may be the same or different;
each R′ independently represents an alkyl group having 1 to 4 carbons, and when there are two or more R′s, each R′ may be the same or different;
and n is an integer from 0 to 3.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

10/810,360Filed 26 Mar 2004

Priority

JP 2003-1047749 Apr 2003

Published

US 2004/0201007 A114 Oct 2004

Granted

10 Oct 2006

Term ends

Not estimatedThe source records don’t support an estimate.

Classification5 codes

H10P 14/6922
Containing silicon: the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
H10P 14/6342
Deposition processes: liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
H10P 14/665
Characterised by the type of materials: porous materials
H10P 14/6686
The compound comprising silicon and oxygen: the compound being a molecule comprising at least one silicon-oxygen bond and the compound having…

Composition for forming porous film, porous film and method for forming the same, interlevel insulator film

Life of this patent

Composition for forming porous film, porous film and method for forming the same, interlevel insulator film

Life of this patent

Abstract

Claims8