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US 7,119,322 B2Granted
CMOS image sensor having pinned diode floating diffusion region
AssigneeMicron Technology, Inc.
InventorSungkwon C. Hong
Life of this patent
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Abstract
The present invention provides an image sensor having a pinned floating diffusion region in addition to a pinned photodiode. The pinned floating diffusion region increases the capacity of the sensor to store charge, increases the dynamic range of the sensor and widens intra-scene intensity variation.
Claims18
A method of forming a pixel sensor cell comprising:
- forming said pixel sensor cell having a photoconversion device having a first pinning potential (VPIN1) and a charge collection region having a second pinning potential (VPIN2), wherein VPIN2 is different from VPIN1 said charge collection region having a first doped region of a first conductivity type;
- forming a second doped region associated with said charge collection region having a second conductivity type;
- forming a contact connected to said charge collection region;
- and
- forming a third doped region having said first conductivity type under said contact and associated with said charge collection region.
2 more elements
A method of forming a pixel sensor cell comprising:
- forming said pixel sensor cell having a photoconversion device and a charge collection region. said charge collection region having a first doped region of a first conductivity type;
- forming a second doped region associated with said charge collection region having a second conductivity type;
- forming a contact connected to said charge collection region;
- implanting a third doped region having said first conductivity type under said contact and associated with said charge collection region;
- and
- forming a storage capacitor connected to said third doped region.
3 more elements
A method of forming a pixel sensor cell comprising:
- forming said pixel sensor cell having a photoconversion device and a charge collection region, said charge collection region having a first doped region of a first conductivity type;
- forming a second doped region associated with said charge collection region having a second conductivity type;
- forming a contact connected to said charge collection region;
- and
- implanting a third doped region having said first conductivity type under said contact and associated with said charge collection region,
- wherein said second doped region surrounds said third doped region, said third doped region extending into said first doped region.
3 more elements
Dependencies are inferred from the claim text.