Compositions and methods for high-efficiency cleaning/polishing of semiconductor wafers
AssigneeAdvanced Technology Materials, Inc.
InventorsMichael B. Korzenski, Chongying Xu, Thomas H. Baum, David Minsek, Eliodor G. Ghenciu
Life of this patent
Estimating the term…
Abstract
A composition including supercritical fluid and at least one additive selected from fluoro species, and primary and/or secondary amines, optionally with co-solvent, low k material attack-inhibitor(s) and/or surfactant(s). The composition has particular utility for cleaning of semiconductor wafers to remove post-ashing residues therefrom.
Claims86
A composition for cleaning semiconductor wafers, wherein the composition includes supercritical fluid, at least one fluoro species, and an inhibitor that is effective to inhibit attack of the cleaning composition on low dielectric constant layer material, wherein said inhibitor comprises boric acid.
A composition for cleaning semiconductor wafers, wherein the composition includes supercritical fluid, at least one primary and/or secondary amine(s), and at least one surfactant, wherein the primary and/or secondary amine(s) include at least one amine species selected from the group consisting of hydroxylamine (NH2OH), ammonia (NH3), alkylamines (R—NH2) and dialkylamines (R1R2NH), wherein R, R1 and R2 are each independently selected from C1–C6 alkyl and aryl.
A method of cleaning of a semiconductor wafer, comprising contacting the semiconductor wafer with a supercritical fluid-based cleaning composition including supercritical fluid, at least one fluoro species, and an inhibitor that is effective to inhibit attack of the cleaning composition on low dielectric constant layer material, wherein said inhibitor comprises boric acid.
A method of cleaning of a semiconductor wafer, comprising contacting the semiconductor wafer with a supercritical fluid-based cleaning composition including supercritical fluid, at least one primary and/or secondary amine(s), and at least one surfactant, wherein the primary and/or secondary amine(s) include at least one amine species selected from the group consisting of hydroxylamine (NH2OH), ammonia (NH3), alkylamines (R—NH2) and dialkylamines (R1R2NH), wherein R, R1 and R2 are each independently selected from C1–C6 alkyl and C6 aryl.
Dependencies are inferred from the claim text.