Ion-assisted oxidation methods and the resulting structures
AssigneeMicron Technology, Inc.
InventorsLi Li, Pai-Hung Pan
Life of this patent
Estimating the term…
Abstract
Oxidation methods and resulting structures including providing an oxide layer on a substrate and then re-oxidizing the oxide layer by vertical ion bombardment of the oxide layer in an atmosphere containing at least one oxidant. The oxide layer may be provided over diffusion regions, such as source and drain regions, in a substrate. The oxide layer may overlie the substrate and is proximate a gate structure on the substrate. The at least one oxidant may be oxygen, water, ozone, or hydrogen peroxide, or a mixture thereof. These oxidation methods provide a low-temperature oxidation process, less oxidation of the sidewalls of conductive layers in the gate structure, and less current leakage to the substrate from the gate structure.
Claims30
An oxidation method, comprising:
- providing a semiconductor substrate including silicon oxide on a portion of a surface thereof;
- and
- bombarding at least one of oxygen atoms of the silicon oxide and oxygen atoms proximate to the silicon oxide with at least one inert ion in an atmosphere consisting essentially of the at least one ion of an inert atom, hydrogen, and at least one oxidant to energize the oxygen atoms and to increase a thickness of the silicon oxide.
An oxidation method, comprising:
- providing a semiconductor device structure comprising:
- a semiconductor substrate with at least one diffusion region formed therein;
- silicon oxide positioned on the semiconductor substrate and over the at least one diffusion region;
- and
- a structure positioned on the semiconductor substrate, laterally adjacent to the at least one diffusion region;
- and
- bombarding oxygen atoms located substantially over the at least one diffusion region with at least one ion of an inert atom in an atmosphere consisting essentially of the at least one ion, hydrogen, and at least one oxidant.
Dependencies are inferred from the claim text.