Method of oxidizing a silicon substrate and method of forming an oxide layer using the same

A method of forming an oxide layer on a substrate comprising:

• generating ozone by reacting an oxygen gas having a first flow rate with a nitrogen gas having a second flow rate of greater than about 1% of the first flow rate;
• providing a reactant including the ozone and nitrogen onto an adsorption film formed on a silicon substrate;
• and
• forming an oxide layer on the silicon substrate by reacting the reactant with the adsorption film.

A method of forming a metal oxide layer on substrate comprising:

• generating ozone by reacting an oxygen gas having a first flow rate with a nitrogen gas having a second flow rate of more than about 1% of the first flow rate;
• providing a metal precursor and a reactant including the ozone and nitrogen onto a silicon substrate;
• and
• forming a metal oxide layer on the silicon substrate by reacting the reactant with the metal precursor.