Manufacturing method of semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsIchiro Uehara, Hideomi Suzawa
Life of this patent
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Abstract
In the manufacturing method of a GOLD structured TFT having a gate electrode of double-layered structure, in which, compared to a second layer gate electrode, the first layer gate electrode is thinner in film thickness and longer in dimension of the channel direction, by controlling the density of the photo-absorbent contained in a positive type resist such as diazonaphthoquinone (DNQ)-novolac resin series, the taper angle of the side wall is controlled to a desired angle range so that the angle thereof becomes smaller. Owing to this, it is possible to control the retreat amount of the resist when carrying out dry etching and the dimension of Lov area to a desired dimensional range so that the dimension thereof becomes larger.
Claims20
A method of producing a semiconductor device, comprising:
- forming a resist film comprising diazonaphthoquinone (DNQ)-novolac resin series, which contains a photo-absorbent, over a coating formed over an insulating substrate;
- and
- patterning said resist film into a resist pattern having a taper angle of 45 to 65° with respect to a surface of said coating by irradiating a light;
- and
- etching said coating using said resist pattern.
A method of producing a semiconductor device, comprising:
- forming a semiconductor layer over an insulating substrate;
- forming a gate insulating film over said semiconductor layer;
- forming a first layer gate electrode over said gate insulating film;
- forming a second layer gate electrode over said first layer gate electrode;
- forming a resist film comprising diazonaphthoquinone (DNQ)-novolac resin series, which contains a photo-absorbent, over said second layer gate electrode;
- patterning said resist film into a resist pattern by irradiating a light to said resist film to form a taper angle of 45 to 65° formed between a surface of said insulating substrate and a side wall of said resist pattern;
- forming a first shaped gate electrode by subjecting said first layer gate electrode and said second layer gate electrode to dry etching using said resist pattern as a mask;
- forming a first impurity area by injecting a single-conductive impurity element into said semiconductor layer using said first shaped gate electrode as a mask;
- forming a second shaped gate electrode in which said first layer gate electrode is longer than said second layer gate electrode in dimension of the channel direction by subjecting said first shaped gate electrode to dry etching using said resist pattern as a mask;
- and
- forming a second impurity area positioned under said first layer gate electrode and a third impurity area sandwiched between said first impurity area and said second impurity area by injecting said impurity element into said semiconductor layer using said second shaped gate electrode as a mask.
A method of producing a semiconductor device, comprising:
- forming a semiconductor layer over an insulating substrate;
- forming a gate insulating film over said semiconductor layer;
- forming a first layer gate electrode over said gate insulating film;
- forming a second layer gate electrode over said first layer gate electrode;
- forming a resist film comprising diazonaphthoquinone (DNQ)-novolac resin series, which contains a photo-absorbent, over said second layer gate electrode;
- patterning said resist film into a resist pattern by irradiating a light to said resist film to form a taper angle of 45 to 65° formed between a surface of said insulating substrate and a side wall of said resist pattern;
- forming a first shaped gate electrode by subjecting said first layer gate electrode and said second layer gate electrode to dry etching using said resist pattern as a mask;
- forming a first impurity area by injecting a single-conductive impurity element into said semiconductor layer using said first shaped gate electrode as a mask;
- forming a second shaped gate electrode in which said first layer gate electrode is longer than said second layer gate electrode in dimension of the channel direction by subjecting said first shaped gate electrode to dry etching using said resist pattern as a mask;
- forming a second impurity area positioned under said first layer gate electrode and a third impurity area sandwiched between said first impurity area and said second impurity area by injecting said impurity element into said semiconductor layer using said second shaped gate electrode as a mask;
- and
- forming a third shaped gate electrode by selectively subjecting said first layer gate electrode included by said second shaped gate electrode to etching.
Dependencies are inferred from the claim text.