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US 7,119,019 B2Granted
Capping of copper structures in hydrophobic ILD using aqueous electro-less bath
AssigneeIntel Corporation
InventorsKevin P. O'Brien, Justin K. Brask
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Abstract
Capping of copper structures in hydrophobic interlayer dielectric layer, using aqueous electro-less bath is described herein.
Claims11
A method comprising:
- providing a wafer comprising a plurality of copper structures partially encased in a hydrophobic interlayer dielectric layer, wherein top surfaces of the copper structures are exposed and substantially co-planar with a top surface of the hydrophobic interlayer dielectric layer;
- and
- selectively depositing a cobalt capping layer on the top surfaces of the plurality of copper structures with substantially no deposition of the cobalt on the top surface of the hydrophobic interlayer dielectric layer, using an aqueous electro-less bath;
- and
- applying sonic energy to the aqueous electro-less bath during said selective deposition.
2 more elements
A method comprising:
- providing a wafer comprising a plurality of copper structures partially encased in a hydrophobic interlayer dielectric layer, wherein top surfaces of the copper structures are exposed and substantially co-planar with a top surface of the hydrophobic interlayer dielectric layer;
- selectively depositing a cobalt capping layer on the top surfaces of the plurality of copper structures;
- and
- simultaneously rinsing and applying sonic energy to the hydrophobic interlayer dielectric layer to decrease the amount of cobalt particles adhered to the hydrophobic interlayer dielectric layer.
1 more element
A method comprising:
- providing a wafer comprising a plurality of copper structures partially encased in a hydrophobic interlayer dielectric layer, wherein top surfaces of the copper structures are exposed and substantially co-planar with a top surface of the hydrophobic interlayer dielectric layer;
- selectively depositing a cobalt capping layer on the top surfaces of the plurality of copper structures with substantially no deposition of cobalt on the top surface of the hydrophobic interlayer dielectric layer, using an aqueous electro-less bath;
- and
- reducing surface tension of the aqueous electro-less bath during deposition of the cobalt capping layer to increase wettability of the top surfaces of the plurality of the copper structures.
1 more element
Dependencies are inferred from the claim text.