US 7,119,016 B2 · Deposition of carbon and nitrogen doped poly silicon films, and retarded boron diffusion and improved poly depletion

Abstract

A compound that includes at least Si, N and C in any combination, such as compounds of formula (R—NH)4-nSiXn wherein R is an alkyl group (which may be the same or different), n is 1, 2 or 3, and X is H or halogen (such as, e.g., bis-tertiary butyl amino silane (BTBAS)), may be mixed with silane or a silane derivative to produce a film. A polysilicon silicon film may be grown by mixing silane (SiH4) or a silane derviative and a compound including Si, N and C, such as BTBAS. Films controllably doped with carbon and/or nitrogen (such as layered films) may be grown by varying the reagents and conditions.

Claims5

Dependent claims

A process for growing amorphous or polycrystalline silicon, comprising:

growing a film, including mixing:
(A) SiH4 or a silane derivative selected from the group consisting of disilane, trisilane, hexachloro disilane and dichloro silane, with
(B) his-tertiary butyl amino silane (BTBAS),
with a growth time in a range of 15 to 600 seconds for a RTCVD or PECVD process, at a pressure in a range of sub-millitorr to atmosphere, at a temperature in a range of 300 C to 800 C;
wherein amorphous or polycrystalline silicon is grown.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application

10/684,596Filed 15 Oct 2003

Published

US 2005/0085054 A121 Apr 2005

Granted

10 Oct 2006

Term ends

Not estimatedThe source records don’t support an estimate.

Classification6 codes

C23C 16/36
Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides: carbonitrides
C23C 16/24
Characterised by the deposition of inorganic material, other than metallic material: deposition of silicon only
H10P 14/24
Of semiconductor materials: using chemical vapour deposition [CVD]
H10P 14/3411
Being Group IVA materials: silicon, silicon germanium or germanium

Deposition of carbon and nitrogen doped poly silicon films, and retarded boron diffusion and improved poly depletion

Life of this patent

Deposition of carbon and nitrogen doped poly silicon films, and retarded boron diffusion and improved poly depletion

Life of this patent

Abstract

Claims5