Method for fabricating a semiconductor device having a tapered-mesa side-wall film
AssigneeElpida Memory, Inc.
InventorYoshihiro Satoh
Life of this patent
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Abstract
A method for fabricating a semiconductor memory device includes the consecutive steps of consecutively depositing metallic, nitride and oxide films on an underlying insulating film, patterning the nitride and oxide films to allow the oxide film to have a patterned area smaller than the patterned area of the nitride film, patterning the metallic film by using the nitride and oxide films as a mask, forming a side-wall film having a tapered mesa structure on the oxide, nitride and metallic films, embedding the side-wall oxide film by an interlayer dielectric film, and forming a contact hole in the interlayer dielectric film and the underlying oxide film while using the side-wall oxide film as an etch stopper.
Claims26
A method for fabricating a semiconductor device comprising, in consecutive order:
- depositing a metallic conductive film on an underlying insulating film;
- consecutively depositing first and second insulator films on said metallic conductive film;
- patterning said first and second insulator films to have a substantially same patterned area;
- etching said second insulator film selectively from said first insulator film to configure said second insulator film to have a bottom with a width smaller than a width of said first insulator film;
- patterning said metallic conductive film by using said first and second insulator films as an etching mask;
- subsequently depositing a third insulator film on said first insulator film, said etched second insulator film, and said underlying insulating film;
- etching-back said third insulator film to configure a side-wall film covering at least said patterned metallic conductive film;
- and
- depositing a fourth insulator film to embed therein said side-wall film on said underlying insulating film.
A method for fabricating a semiconductor device comprising, in consecutive order:
- depositing a metallic conductive film on an underlying insulating film;
- consecutively depositing first and second insulator films on said metallic conductive film;
- patterning said first and second insulator films to have a substantially same patterned area;
- patterning said metallic conductive film by using said first and second insulator films as an etching mask;
- etching said second insulator film selectively from said first insulator film to configure said second insulator film to have a bottom with a width smaller than a width of said first insulator film;
- subsequently depositing a third insulator film on said first insulator film, said etched second insulator film, and said underlying insulating film;
- etching-back said third insulator film to configure a side-wall film covering at least said patterned metallic conductive film;
- and
- depositing a fourth insulator film to embed therein said side-wall film on said underlying insulating film.
A method for fabricating a semiconductor device, the method comprising:
- depositing a metallic conductive film on an insulating film;
- depositing a first insulator film on said metallic conductive film;
- depositing a second insulator film on said first insulator film;
- patterning said first and second insulator films;
- etching said second insulator film to have a patterned area that is smaller than said first insulator film;
- patterning said metallic conductive film;
- subsequently depositing a third insulator film on said first insulator film, said etched second insulator film, and said insulating film;
- and
- forming a sidewall film by etching said third insulator film.
Dependencies are inferred from the claim text.