US 7,119,011 B2Granted

Semiconductor device and manufacturing method thereof

AssigneeTokyo Electron Limited

InventorsAkitoshi Harada, Shin Okamoto, Koichiro Inazawa

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Abstract

This semiconductor device includes a substrate 60 to be processed, a first insulation film 64 arranged at a designated position on the substrate 60 to have a via-hole 71a, an organic film 65 formed on the first insulation film 64 and a second insulation film 66 formed on the organic film 65. Both of the organic film 65 and the second insulation film 66 have a trench 71b in communication with the via-hole 71a, in common. Additionally, a manufacturing method of this semiconductor device includes the processes of forming the organic film 65 on the substrate 60 to be processed, forming a film having a designated pattern on the organic film 65 while exposing a part of the organic film 65, and removing the exposed part of the organic film 65 from the substrate 60 to expose a foundation layer of the organic film 65.

Claims7

Dependent claims

A manufacturing method of a semiconductor device having a groove interconnecting element of damascene structure, comprising the steps of:

forming a first insulation film on a substrate to be processed;
forming an organic film on the first insulation film;
forming a second insulation film on the organic film;
forming a via-hole penetrating the first insulation film, the organic film and the second insulation film;
forming a sacrifice film consisting of inorganic material on the second insulation film so as to embed the sacrifice film in the via-hole;
forming a resist film having a designated pattern on the sacrifice film;
forming a trench reaching a top surface of the organic film in accordance with the designated pattern of the resist film;
and
removing both the resist film and an exposed part of the organic film to the trench, from the substrate to be processed, simultaneously by ashing,
wherein a bottom surface of the trench is smoothed, and the sacrifice film serves as a protection against the ashing process for the second insulation film.

7 more elements

Dependencies are inferred from the claim text.

Facts

Application: 10/845,581Filed 14 May 2004
Priority: JP 2003-13838916 May 2003
Published: US 2004/0256726 A123 Dec 2004
Granted: 10 Oct 2006
Term ends: Not estimatedThe source records don’t support an estimate.

Classification5 codes

H10W 20/085
For dual-damascene structures: involving intermediate temporary filling with material
H10W 20/071
Manufacture or treatment: of dielectric parts thereof
H10W 20/074
Of dielectric parts thereof: of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or…
H10W 20/0884
For dual-damascene structures: involving forming vias by burying sacrificial pillars in the dielectric parts and removing the pillars