Semiconductor device, its manufacturing method, and ratio communication device

A method for manufacturing a semiconductor device having a plurality of amplification stages of a multistage amplifier unit, comprising the steps of:

• a) preparing a wiring substrate;
• b) forming a metalized layer over a main surface of said wiring substrate;
• c) forming a gate bonding pad and a drain bonding pad over the main surface of said wiring substrate;
• d) supplying a fusion bonding material on said metalized layer;
• e) mounting a first semiconductor chip including a first field effect transistor on said fusion bonding material;
• f) heating to fuse said fusion bonding material;
• g) connecting said gate electrode and gate bonding pad by a gate wire;
• h) connecting said drain electrode and drain pad by a drain wire wherein in the step (d), said fusion bonding material is supplied in an area which is closer to said drain bonding pad compared with said gate bonding pad;
• said first field effect transistor comprises a final amplification stage of said plurality of amplification stages;
• said drain wire is shorter than said gate wire;
• and
• said first semiconductor chip is fixed closer to said drain bonding pad.

A method for manufacturing a semiconductor device having a plurality of amplification stages of a multistage amplifier unit, comprising the steps of:

• a) preparing a wiring substrate;
• b) forming a metalized layer over a main surface of said wiring substrate;
• c) forming a base bonding pad and a collector bonding pad over the main surface of said wiring substrate;
• d) supplying a fusion bonding material on said metalized layer;
• e) mounting a first semiconductor chip including a first bipolar transistor on said fusion bonding material;
• f) heating to fuse said fusion bonding material;
• g) connecting said base electrode and base pad by a base wire;
• h) connecting said collector electrode and collector pad by a collector,
• wherein in the step (d), said fusion bonding material is supplied in an area which is closer to said collector bonding pad compared with said base bonding pad;
• said first bipolar transistor comprises a final amplification stage of said plurality of amplification stages;
• said collector wire is shorter than said base wire;
• and
• said first semiconductor chip is fixed closer to said collector bonding pad.