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US 7,119,002 B2Granted
Solder bump composition for flip chip
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorKuo-Wei Lin
Life of this patent
Estimating the term…
Abstract
It is an object of the present invention to provide a method for solder bump formation using a combination of eutectic and high lead solders. The present invention provides a method for improving a solder bump composition for a flip chip.
Claims6
A method for improving a solder bump composition for a flip chip, comprising the steps of:
- providing at least two UBM layers overlying a chip bonding pad including an uppermost UBM layer forming a contact layer for forming a solder bump thereon;
- depositing a solder bump precursor material overlying the contact layer to form a solder column, wherein said solder bump precursor material contains a combination of high lead and eutectic solder regions;
- exposing the sidewalls of the solder column to include the contact layer sidewalls;
- oxidizing the contact layer sidewalls to form a contact layer sidewall oxide at a temperature lower than the melting point of the solder bump precursor material to make the contact layer sidewalls unwettable in a subsequent reflow process;
- and,
- forming a solder bump by reflowing the precursor material to wet the contact layer surface to exclude the contact layer sidewalls,
- whereby the solder bump contains a combination of a layer of high lead solder, with a layer of eutectic solder encompassing the high lead region of the bump, wherein the melting point of the high lead solder is about 300° C. or greater, and the melting point of the eutectic solder is about 180° C.
4 more elements
A method for solder bump formation comprising:
- providing at least two UBM layers overlying a chip bonding pad including an uppermost UBM layer forming a contact layer for forming a solder bump thereon;
- depositing a solder bump precursor material overlying the contact layer to form a solder column, wherein said solder bump precursor material contains a combination of high lead and eutectic solder regions;
- exposing the sidewalls of the solder column to include the contact layer sidewalls;
- oxidizing the contact layer sidewalls to form a contact layer sidewall oxide at a temperature lower than the melting point of the solder bump precursor material to make the contact layer sidewalls unwettable in a subsequent reflow process;
- and,
- forming a solder bump by reflowing the precursor material to wet the contact layer surface to exclude the contact layer sidewalls,
- whereby the solder bump contains a combination of a layer of high lead solder, with a layer of eutectic solder encompassing the high lead region of the bump, wherein the melting point of the high lead solder is about 300° C. or greater, and the melting point of the eutectic solder is about 180° C.
4 more elements
Dependencies are inferred from the claim text.