Method of manufacturing semiconductor device
AssigneeFujitsu Limited
InventorsKozo Shimizu, Seiki Sakuyama
Life of this patent
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Abstract
The resist film is provided on the surface of the substrate having electrodes, and openings are provided in the resist film at positions of the electrodes on the substrate. The first metal is supplied into the openings. The first metal is then heated to melt and coagulate it. The second metal is then supplied into the openings on the first metal. The first metal and the second metal are heated to melt and coagulate them. The resist film is finally removed. By this method, excellent solder bumps can be formed on the substrate without remnants of the resist film being left on the substrate.
Claims8
A method of manufacturing a semiconductor device comprising, in the recited order, the steps of:
- forming an insulating film on a surface of a semiconductor element or a circuit wiring board having electrodes on the surface thereof;
- forming openings in the insulating film by patterning the insulating film and then removing portions of the insulating film above the electrodes;
- supplying a first metal into the openings;
- heating the first metal to melt and coagulate the first metal, wherein the first metal has a characteristic in which a volume thereof is increased when it is heated to be molten and coagulated in such a manner that the diameter of the opening of the insulating layer is increased;
- supplying a second metal into the openings on the coagulated first metal;
- heating the first metal and the second metal to melt and coagulate the first metal and the second metal;
- and
- removing the insulating film.
Dependencies are inferred from the claim text.