Apparatus and method for doping
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Toshiji Hamatani, Koichiro Tanaka
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Abstract
There is proposed an apparatus for doping a material to be doped by generating plasma (ions) and accelerating it by a high voltage to form an ion current is proposed, which is particularly suitable for processing a substrate having a large area. The ion current is formed to have a linear sectional configuration, and doping is performed by moving a material to be doped in a direction substantially perpendicular to the longitudinal direction of a section of the ion current.
Claims38
A doping method comprising:
- generating an ion current;
- separating said ion current on a mass basis into at least two ion currents, including a first ion current and a second ion current;
- accelerating said first ion current using an acceleration electrode;
- and
- radiating said accelerated first ion current and said second ion current to a same substrate at different angles,
- wherein, after said second ion current is separated, said second ion current is radiated to the substrate without accelerating the second ion current with the acceleration electrode.
A doping method comprising:
- generating an ion current having a cross section elongated in one direction;
- separating said ion current on a mass basis into at least two ion currents, including a first ion current and a second ion current;
- accelerating said first ion current using an acceleration electrode;
- and
- radiating said accelerated first ion current and said second ion current to a same substrate at different angles,
- wherein, after said second ion current is separated, said second ion current is radiated to the substrate without accelerating the second ion current with the acceleration electrode.
A doping method comprising:
- generating an ion current having a cross section elongated in one direction;
- separating said ion current on a mass basis into at least two ion currents, including a first ion current and a second ion current;
- accelerating said first ion current using an acceleration electrode;
- and
- radiating said accelerated first ion current and said second ion current to a same substrate at different angles, while moving said substrate along a direction perpendicular to said one direction,
- wherein, after said second ion current is separated, said second ion current is radiated to the substrate without accelerating the second ion current with the acceleration electrode.
A doping method comprising:
- generating an ion current having a cross section elongated in one direction;
- separating said ion current on a mass basis into at least two ion currents, including a first ion current and a second ion current;
- accelerating said first ion current using an acceleration electrode;
- radiating said accelerated first ion current and said second ion current to a same substrate at different angles so that penetration depths of ions of said first and second ion currents are substantially the same,
- wherein, after said second ion current is separated, said second ion current is radiated to the substrate without accelerating the second ion current with the acceleration electrode.
A doping method comprising:
- generating an ion current having a cross section elongated in one direction;
- separating said ion current on a mass basis into at least two ion currents, including a first ion current and a second ion current;
- accelerating said first ion current using an acceleration electrode;
- and
- radiating said accelerated first ion current and said second ion current to a same substrate at different angles so that penetration depths of ions of said first and second ion currents are substantially the same, while moving said substrate along a direction perpendicular to said one direction,
- wherein, after said second ion current is separated, said second ion current is radiated to the substrate without accelerating the second ion current with the acceleration electrode.
Dependencies are inferred from the claim text.