Method of manufacturing transistor having germanium implant region on the sidewalls of the polysilicon gate electrode
AssigneeTexas Instruments Incorporated
InventorsKaiping Liu, Zhiqiang Wu, Majid Movahed Mansoorz
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Abstract
The present invention provides a transistor 100 having a germanium implant region 170 located therein, a method of manufacture therefor, and an integrated circuit including the aforementioned transistor. The transistor 100, in one embodiment, includes a polysilicon gate electrode 140 located over a semiconductor substrate 110, wherein a sidewall of the polysilicon gate electrode 140 has a germanium implanted region 170 located therein. The transistor 100 further includes source/drain regions 160 located within the semiconductor substrate 110 proximate the polysilicon gate electrode 140.
Claims12
A method for manufacturing a transistor, comprising:
- forming a polysilicon gate electrode over a semiconductor substrate;
- implanting a sidewall of said polysilicon gate electrode with germanium, thereby forming a germanium implanted region;
- and
- placing source/drain regions within said semiconductor substrate proximate said polysilicon gate electrode before said implanting, said source/drain regions including lightly doped source/drain portions that extend under said polysilicon gate electrode by a distance X, wherein said germanium implanted region has a thickness of less than X.
A method for manufacturing a transistor, comprising:
- forming a polysilicon gate electrode over a semiconductor substrate;
- implanting lightly doped source/drain portions in said semiconductor substrate to a first depth;
- implanting a sidewall of said polysilicon gate electrode with germanium after said implanting lightly doped source/drain portions, to a second depth, forming a germanium implanted region wherein said second depth is less than said first depth;
- and
- placing source/drain regions within said semiconductor substrate proximate said polysilicon gate electrode.
Dependencies are inferred from the claim text.