System and method for improved dopant profiles in CMOS transistors
AssigneeTexas Instruments Incorporated
InventorsPR Chidambaram, Srinivasan Chakravarthi
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Abstract
According to one embodiment of the present invention, a method of forming a semiconductor device includes forming a gate stack on an outer surface of a semiconductor body. First and second sidewall bodies are formed on opposing sides of the gate stack. A first recess is formed in an outer surface of the gate stack, and a first dopant is implanted into the gate stack after the first recess is formed. The first dopant diffuses inwardly from the outer surface of the gate stack that defines the first recess. The first dopant diffuses toward an interface between the gate stack and the semiconductor body. The first recess increases the concentration of the first dopant at the interface.
Claims10
A method of forming a semiconductor device, comprising:
- forming a gate stack on an outer surface of a semiconductor body, the gate stack including a gate conductor;
- forming a first and second sidewall bodies on opposing sides of the gate stack;
- simultaneously forming a first recess in an outer surface of the gate conductor and second and third recesses in a region of the semiconductor body;
- and
- simultaneously implanting a first dopant into the gate conductor and the semiconductor body through the first, second and third recesses, the first dopant diffusing inwardly from the outer surface of the gate conductor that defines the first recess, the first dopant diffusing toward an interface between the gate stack and the semiconductor body, the first recess increasing the concentration of the first dopant at the interface, and further wherein the first dopant diffuses into the semiconductor body to form a first source drain region.
Dependencies are inferred from the claim text.