Method of forming a field effect transistor
AssigneeMicron Technology, Inc.
InventorsSanh D. Tang, Michael P. Violette, Robert Burke
Life of this patent
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Abstract
In one implementation, a method of forming a field effect transistor includes etching an opening into source/drain area of a semiconductor substrate. The opening has a base comprising semiconductive material. After the etching, insulative material is formed within the opening over the semiconductive material base. The insulative material less than completely fills the opening and has a substantially uniform thickness across the opening. Semiconductive source/drain material is formed within the opening over the insulative material within the opening. A transistor gate is provided operatively proximate the semiconductive source/drain material. Other aspects and implementations are contemplated.
Claims12
A method of forming a field effect transistor having a conductive gate received over a gate dielectric and having lightly doped drain regions formed within semiconductive material, the method comprising:
- doping the semiconductive material effective to form the lightly doped drain regions prior to forming any conductive gate material for the transistor gate;
- etching the semiconductive material to form openings;
- forming insulating material within the openings after forming the lightly doped drain regions;
- forming elevated source/drain material for the transistor within the openings over the insulating material;
- and
- after forming the elevated source/drain material, depositing and anisotropically etching insulative material effective to form anisotropically etched insulative sidewall spacers against the elevated source/drain material and prior to forming any conductive gate material for the transistor gate.
A method of forming a field effect transistor having a conductive gate received over a gate dielectric and having lightly doped drain regions formed within semiconductive material, the method comprising:
- doping the semiconductive material effective to form the lightly doped drain regions prior to forming any gate dielectric material for the transistor gate;
- etching the semiconductive material to form openings;
- forming insulating material within the openings after forming the lightly doped drain regions;
- forming elevated source/drain material for the transistor within the openings over the insulating material;
- and
- after forming the elevated source/drain material, depositing and anisotropically etching insulative material effective to form anisotropically etched insulative sidewall spacers against the elevated source/drain material and prior to forming any conductive gate material for the transistor gate.
A method of forming a field effect transistor having a conductive gate received over a gate dielectric and having lightly doped drain regions formed within semiconductive material, the method comprising:
- etching the semiconductive material to form openings;
- forming insulating material within the openings;
- forming elevated source/drain material for the transistor within the openings over the insulating material;
- and
- after forming the elevated source/drain material, depositing and anisotropically etching insulative material effective to form anisotropically etched insulative sidewall spacers against the elevated source/drain material and prior to forming any conductive gate material for the transistor gate.
Dependencies are inferred from the claim text.