Thin film transistor, circuit device and liquid crystal display
AssigneeKabushiki Kaisha Ekisho Sentan Gijutsu Kaihatsu Center
InventorsMasato Hiramatsu, Masakiyo Matsumura, Mikihiko Nishitani, Yoshinobu Kimura, Yoshitaka Yamamoto
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Abstract
A thin film transistor includes a one conductive type semiconductor layer; a source region and a drain region which are separately provided in the semiconductor layer; and a gate electrode provided above or below the semiconductor layer with an insulating film interposed therebetween, wherein the width of the junction face between the source region and the channel which is provided between the source region and drain region, is different from the width of the junction face between the above channel region and the drain region.
Claims20
A thin film semiconductor device, comprising:
- a substrate;
- a conductive type semiconductor layer provided on the substrate and having a trapezoidal planar shape including a long side, a short side, and an opening angle of at least 20 degrees;
- and
- a transistor with a source region and a drain region in the trapezoidal semiconductor layer wherein either the source region is on the long side and drain region is on the short side or the source region is on the short side and the drain region is on the long side.
A thin film transistor, comprising:
- a crystallized conductive type semiconductor layer having a trapezoidal planar shape with a long side, a short side, and an opening angle of at least 20 degrees;
- a source region and a drain region provided in the trapezoidal semiconductor layer, wherein either the source region is on the long side and drain region is on the short side or the source region is on the short side and the drain region is on the long side;
- a gate electrode provided above or below the semiconductor layer with an insulating film interposed therebetween;
- and
- wherein a channel region is located between the source region and the drain region and a first junction face extends between the source region and the channel region and has a first junction face width, and a second junction face extends between the channel region and the drain region and has a second junction face width, and wherein the first junction face width differs from the second junction face width.
Dependencies are inferred from the claim text.