Production method of a thin film device, production method of a transistor, electro-optical apparatus and electronic equipment
AssigneeSeiko Epson Corporation
InventorsIchio Yudasaka, Tatsuya Shimoda, Masahiro Furusawa
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Abstract
In this production method of a thin film device, a thin film is formed by discharging a liquid material from a nozzle in a deposition chamber to coat the liquid material onto a substrate. The substrate is then subjected to heat treatment by a first heat treatment unit and a second heat treatment unit, thereby improving the crystallinity and fitness of the film as well as its adhesion with other films.
Claims24
A method of manufacturing a device, the method comprising:
- forming a first film on a base material;
- forming a functional film, the forming of the functional film including depositing a liquid material only in a recess surrounded by the first film, and the forming of the first film being carried out prior to the forming of the functional film;
- and
- removing at least a part of the first film.
A method of manufacturing a device, the method comprising:
- forming a first film on a base material;
- forming a functional film, the forming of the functional film including depositing a liquid material in a recess surrounded by the first film, and the forming of the first film being carried out prior to the forming of the functional film;
- removing at least a part of the first film;
- and
- treating the first film to input liquid repellency to the first film.
A method of manufacturing a transistor including a functional film, the method comprising:
- forming a first film on a base material;
- and
- forming the functional film, the forming of the functional film including depositing a liquid material only in a recess surrounded by the first film, and the forming of the first film being carried out prior to the forming of the functional film.
A method of manufacturing a transistor including a functional film, the method comprising:
- forming a first film on a base material, the first film including an inorganic layer made of an inorganic material and an organic layer made of an organic material;
- and
- forming the functional film, the forming of the functional film including depositing a liquid material in the first film, and the forming of the first film being carried out prior to the forming of the functional film.
A method of manufacturing a transistor including a functional film, the method comprising:
- forming a first film on a base material;
- forming the functional film, the forming of the functional film including depositing a liquid material only in a recess surrounded by the first film, and the forming of the first film being carried out prior to the forming of the functional film;
- and
- removing at least a part of the first film.
A method of manufacturing a transistor including a functional film, the method comprising:
- forming a first film on a base material;
- forming the functional film, the forming of the functional film including depositing a liquid material in a recess surrounded by the first film, the liquid material containing electrically conductive particles, and the forming of the first film being carried out prior to the forming of the functional film;
- and
- removing at least a part of the first film.
Dependencies are inferred from the claim text.