Method of making atomic integrated circuit device

A method for mass-producing a solid state device comprising:

• supplying a solid state material substrate;
• providing a solid state material pocket positioned on a selected surface of the substrate;
• and
• forming a solid state material layer less than 40 angstroms thick and metallurgically bonded onto a selected surface of the substrate;
• said metallurgical bonding being so sufficiently uniform and defect-free as to provide a thermochemically stable bonding interface and to give a manageable device yield.

A method for mass-producing a solid state device comprising:

• supplying a solid state material substrate having a first conductivity type:
• supplying a solid state material pocket of a second conductivity type and contacting a top surface of the solid substrate;
• providing a signal-translating, interfacial rectifying barrier region where the solid pocket contacts the solid substrate;
• and
• forming an electrically insulating, solid state material layer metallurgically bonded onto selected portions of both the solid substrate and the solid pocket, sufficiently uniformly and defect-freely to achieve a manageable device yield;
• there being no thermally and electrically insulating voids and microcracks to cause unstable electrical contacts, unwanted instabilities;
• leakage current;
• low breakdown voltage;
• boron penetration;
• and poor device performance, reproducibility, yield, reliability, and resistance to ambient particularly as to moisture.

A method of mass-producing a solid state device of less than 0.1 micron in size, with nanometer accuracy, comprising:

• supplying a semiconductor material substrate of one conductivity type;
• and
• providing a semiconductor material pocket positioned on said substrate and having a conductivity type opposite to said one conductivity type thereby forming an electrically rectifying barrier between said substrate and said pocket;
• a lower surface of the semiconductor material pocket being chemically bonded, with a metallurgically graded seal, onto a selected portion of a top surface of said substrate, sufficiently uniformly and defect-freely to provide an acceptable device yield.