Porous substrate for epitaxial growth, method for manufacturing same, and method for manufacturing III-nitride semiconductor substrate
AssigneeHitachi Cable, Ltd.
InventorsYuichi Oshima, Masatomo Shibata
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Abstract
A porous substrate for epitaxial growth includes an underlying layer made of III-nitride semiconductor which is grown on a sapphire substrate, a void-formation preventive layer which is grown on the underlying layer, a porous III-nitride semiconductor layer and a porous metallic layer on the porous III-nitride semiconductor layer.
Claims35
A porous substrate for epitaxial growth, comprising:
- an underlying layer made of III-nitride semiconductor;
- a void-formation preventive layer grown on the underlying layer;
- a porous III-nitride semiconductor layer;
- and
- a porous metallic layer grown on the porous III-nitride semiconductor layer.
A porous substrate for epitaxial growth, comprising:
- a sapphire substrate;
- a GaN layer grown on the sapphire substrate;
- an AlGaN layer grown on the GaN layer;
- a porous GaN layer grown on the AlGaN layer;
- and
- a porous TiN layer.
A method for manufacturing a porous substrate for epitaxial growth, comprising the steps of:
- growing a void-formation preventive layer on an underlying layer made of III-nitride semiconductor;
- growing III-nitride semiconductor layer on the void-formation preventive layer;
- growing a metallic layer on the III-nitride semiconductor layer;
- and
- forming voids in the III-nitride semiconductor layer and the metallic layer grown on the void-formation preventive layer.
A method for manufacturing a porous substrate for epitaxial growth, comprising the steps of:
- growing a first GaN layer on a sapphire substrate;
- growing an AlGaN layer on the first GaN layer;
- growing a second GaN layer on the AlGaN layer;
- growing a Ti layer on the second GaN layer;
- and
- heat-treating the second GaN layer and the Ti layer in a mixed gas atmosphere of hydrogen gas and a hydride gas to form voids in the second GaN layer and the Ti layer.
A method for manufacturing III-nitride semiconductor substrate, comprising the steps of:
- growing a void-formation preventive layer on an underlying layer made of III-nitride semiconductor;
- growing III-nitride semiconductor layer on the void-formation preventive layer;
- growing a metallic layer on the III-nitride semiconductor layer;
- forming voids in the III-nitride semiconductor layer and the metallic layer grown on the void-formation preventive layer;
- epitaxially growing III-nitride semiconductor substrate on the metallic layer in which voids are formed;
- and
- exfoliating the III-nitride semiconductor substrate from the metallic layer.
A method for manufacturing III-nitride semiconductor substrate, comprising the steps of:
- growing a first GaN layer on a sapphire substrate;
- growing an AlGaN layer on the first GaN layer;
- growing a second GaN layer on the AlGaN layer;
- growing a Ti layer on the second GaN layer;
- and
- heat-treating the second GaN layer and the Ti layer in a mixed gas atmosphere of hydrogen gas and a hydride gas to form voids in the second GaN layer and the Ti layer;
- epitaxially growing a GaN substrate on the Ti layer in which voids are formed;
- and
- exfoliating the GaN substrate from the Ti layer.
Dependencies are inferred from the claim text.