Method of forming a semiconductor phosphor layer by metalorganic chemical vapor deposition for use in light-emitting devices
AssigneeUniversity of Cincinnati
InventorsAndrew J. Steckl, Ming Pan
Life of this patent
Estimating the term…
Abstract
Light-emitting devices having a semiconductor phosphor layer formed by metalorganic chemical vapor deposition (MOCVD). The semiconductor phosphor layer may be any Group III nitride semiconductor compound that is in-situ doped during MOCVD deposition with one or more dopants effective to act as luminescent centers. The MOCVD deposition conditions required for the formation of these extrinsic luminescent films differ significantly from the MOCVD deposition conditions utilized to deposit intrinsic GaN luminescent films.
Claims29
A method of fabricating a semiconductor phosphor layer for a light-emitting device, comprising:
- providing a first flow of a nitrogen-containing reactant gas;
- providing a second flow of a precursor including a Group III element, said second flow having a ratio of molecular flow rate relative to the first flow of nitrogen-containing reactant gas of less than 1000;
- providing a third flow of a dopant precursor including at least one light-emitting element;
- and
- contacting the first, second and third flows with a heated substrate for depositing a semiconductor phosphor layer, the semiconductor phosphor layer including a non-stoichiometric Group III nitride semiconductor compound enriched in the Group III element and the at least one light-emitting element distributed in the compound semiconductor with a concentration effective to provide light emission.
Dependencies are inferred from the claim text.