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AssigneeCree, Inc.
InventorsXueping Xu, Robert P. Vaudo, Jeffrey S. Flynn, George R. Brandes
Estimating the term…
A III–V nitride, e.g., GaN, substrate including a (0001) surface offcut from the <0001> direction predominantly toward a direction selected from the group consisting of <10-10> and <11-20> directions, at an offcut angle in a range that is from about 0.2 to about 10 degrees, wherein the surface has a RMS roughness measured by 50×50 μm2 AFM scan that is less than 1 nm, and a dislocation density that is less than 3E6 cm−2. The substrate may be formed by offcut slicing of a corresponding boule or wafer blank, by offcut lapping or growth of the substrate body on a corresponding vicinal heteroepitaxial substrate, e.g., of offcut sapphire. The substrate is usefully employed for homoepitaxial deposition in the fabrication of III–V nitride-based microelectronic and opto-electronic devices.
A GaN substrate including a GaN (0001) surface offcut from the <0001> direction predominantly towards a direction selected from the group consisting of <10{overscore (1)}0> and <11{overscore (2)}0> directions, at an offcut angle in a range that is from about 5 to about 10 degrees, wherein said surface has a RMS roughness measured by 50×50 μm2 AFM scan that is less than 1 nm, and a dislocation density that is less than 3E6 cm−2.
A method of forming a GaN substrate including a GaN (0001) surface offcut from the <0001> direction predominantly towards a direction selected from the group consisting of <10{overscore (1)}0> and <11{overscore (2)}0> directions, at an offcut angle in a range that is from about 5 to about 10 degrees, wherein said surface has a RMS roughness measured by 50×50 μm2 AFM scan that is less than 1 nm, and a dislocation density that is less than 3E6 cm−2, said method including growing a bulk GaN single crystal body, and processing said bulk GaN single crystal body to form at least one wafer therefrom, wherein said processing step includes a step selected from the group consisting of:
A method of fabricating a microelectronic or opto-electronic device, comprising
A III–V nitride substrate including a (Al,In,Ga)N (0001) surface offcut from the <0001> direction predominantly towards a direction selected from the group consisting of <10{overscore (1)}0> and <11{overscore (2)}0> directions, at an offcut angle in a range that is from about 5 to about 10 degrees, wherein said surface has a RMS roughness measured by 50×50 μm2 AFM scan that is less than 1 nm, and a dislocation density that is less than 3E6 cm−2.
Dependencies are inferred from the claim text.